Add to ORKGThe lateral coherence of broad-area lasers fabricated from a GaAs/GaAlAs graded index waveguide separate confinement and single quantum well heterostructure grown by molecular-beam epitaxy was investigated. These lasers exhibit a high degree of coherence along the junction plane, thus producing a stable and very narrow far field intensity distribution
A wave-optical model that is coupled to a microscopic gain theory is used to investigate lateral mod...
We analyze the threshold behavior of a pair of laterally coupled semiconductor lasers of different l...
Broad-area GaAs heterostructure lasers with a tilted mirror were demonstrated for the first time, wi...
Structures of GaAs/GaA1As lasers and their performance characteristics are investigated experimental...
The emission characteristics of unstable resonator semiconductor lasers were measured. The output of...
The modal properties of unstable resonator lasers with a lateral waveguide have been analyzed, and a...
108 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1992.With the advent of sophistica...
The emission characteristics of unstable resonator semiconductor lasers were measured. The output of...
Higher-order lateral modes produced in wide GaAs-GaAlAs DH lasers were spectrally analyzed and photo...
A novel laser design is presented that combines a longitudinal-lateral gain-loss modulation with an ...
The lateral modes of broad area lasers are investigated theoretically. The nonlinear interaction bet...
Includes bibliographical references.An experimental study of the optical properties of GaAs/AlₓGa₁₋ₓ...
The lateral brightness achievable with high-power GaAs-based laser diodes having long and broad wave...
The lateral brightness achievable with high-power GaAs-based laser diodes having long and broad wave...
The state filling effect has been suggested as a source responsible for the degradation of modulatio...
A wave-optical model that is coupled to a microscopic gain theory is used to investigate lateral mod...
We analyze the threshold behavior of a pair of laterally coupled semiconductor lasers of different l...
Broad-area GaAs heterostructure lasers with a tilted mirror were demonstrated for the first time, wi...
Structures of GaAs/GaA1As lasers and their performance characteristics are investigated experimental...
The emission characteristics of unstable resonator semiconductor lasers were measured. The output of...
The modal properties of unstable resonator lasers with a lateral waveguide have been analyzed, and a...
108 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1992.With the advent of sophistica...
The emission characteristics of unstable resonator semiconductor lasers were measured. The output of...
Higher-order lateral modes produced in wide GaAs-GaAlAs DH lasers were spectrally analyzed and photo...
A novel laser design is presented that combines a longitudinal-lateral gain-loss modulation with an ...
The lateral modes of broad area lasers are investigated theoretically. The nonlinear interaction bet...
Includes bibliographical references.An experimental study of the optical properties of GaAs/AlₓGa₁₋ₓ...
The lateral brightness achievable with high-power GaAs-based laser diodes having long and broad wave...
The lateral brightness achievable with high-power GaAs-based laser diodes having long and broad wave...
The state filling effect has been suggested as a source responsible for the degradation of modulatio...
A wave-optical model that is coupled to a microscopic gain theory is used to investigate lateral mod...
We analyze the threshold behavior of a pair of laterally coupled semiconductor lasers of different l...
Broad-area GaAs heterostructure lasers with a tilted mirror were demonstrated for the first time, wi...
