Add to ORKGA direct measurement of electron and hole leakage in InGaAsP/InP lasers has been carried out. The effect of electron leakage on the temperature sensitivity of InGaAsP/InP lasers has been revealed
Low temperature behaviour of InGaAsP laser diode is studied. The laser is a Fabry-Pérot type with a ...
In order to identify the performance limitations of InGaAs/AlAs(Sb) quantum cascade lasers, experime...
16 cm-3 n-doped LPE grownGaxIn1-xAsyP1-y samples are presented as a function of temperature, pressur...
Carrier leakage over the heterobarrier in an InGaAsP/InP laser is measured directly in a laser-bipol...
The influences of energy-bond structure parameters and transport mechanisms on the carrier leakage b...
A model calculation for the field and hot carrier enhanced electron leakage in InGaAsP/InP LED's and...
Abstract—Temperature dependencies of the threshold current, device slope efficiency, and heterobarri...
We investigate loss mechanisms in 1.3mum lasers and in visible lasers operating between 630nm and 69...
Abstract—We analyze the temperature sensitivity of 1.5-µm GaInNAsSb lasers grown on GaAs. Building o...
We used numerical simulation to compare the temperature sensitivity of an InGaAsP MQW laser emitting...
The apparent temperature stability of GaInNAs-based lasers is-attributed to significant defect curre...
The improved thermal stability of 1.5 mu m InGaAlAs- compared with InGaAs-based lasers is investigat...
The subjects of this thesis can be divided into two main categories: III-V semiconductor lasers and ...
The work described in this thesis investigates the effect of modifying the band structure in order t...
In AlGaInP/GaInP multi-quantum well (MQW) lasers, the electron leakage current is a much more seriou...
Low temperature behaviour of InGaAsP laser diode is studied. The laser is a Fabry-Pérot type with a ...
In order to identify the performance limitations of InGaAs/AlAs(Sb) quantum cascade lasers, experime...
16 cm-3 n-doped LPE grownGaxIn1-xAsyP1-y samples are presented as a function of temperature, pressur...
Carrier leakage over the heterobarrier in an InGaAsP/InP laser is measured directly in a laser-bipol...
The influences of energy-bond structure parameters and transport mechanisms on the carrier leakage b...
A model calculation for the field and hot carrier enhanced electron leakage in InGaAsP/InP LED's and...
Abstract—Temperature dependencies of the threshold current, device slope efficiency, and heterobarri...
We investigate loss mechanisms in 1.3mum lasers and in visible lasers operating between 630nm and 69...
Abstract—We analyze the temperature sensitivity of 1.5-µm GaInNAsSb lasers grown on GaAs. Building o...
We used numerical simulation to compare the temperature sensitivity of an InGaAsP MQW laser emitting...
The apparent temperature stability of GaInNAs-based lasers is-attributed to significant defect curre...
The improved thermal stability of 1.5 mu m InGaAlAs- compared with InGaAs-based lasers is investigat...
The subjects of this thesis can be divided into two main categories: III-V semiconductor lasers and ...
The work described in this thesis investigates the effect of modifying the band structure in order t...
In AlGaInP/GaInP multi-quantum well (MQW) lasers, the electron leakage current is a much more seriou...
Low temperature behaviour of InGaAsP laser diode is studied. The laser is a Fabry-Pérot type with a ...
In order to identify the performance limitations of InGaAs/AlAs(Sb) quantum cascade lasers, experime...
16 cm-3 n-doped LPE grownGaxIn1-xAsyP1-y samples are presented as a function of temperature, pressur...