A buried crescent InGaAsP/InP laser with a double active layer was fabricated. The laser showed very high characteristic temperature T0 and highly nonlinear light versus current characteristics. A theoretical model using a rate equation approach showed good agreement with the experimental results
A InGaAsP/InP self-aligned, native oxidized buried heterostructure (BH) distributed feedback (DFB) l...
A direct measurement of electron and hole leakage in InGaAsP/InP lasers has been carried out. The ef...
This thesis studies the characterization and simulation of long wavelength indium aluminium gallium ...
Abstract-A buried crescent InGaAsP-InP laser with two active lay-ers was fabricated to study the tem...
A buried crescent InGaAsP-InP laser with two active layers was fabricated to study the temperature b...
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy ...
A theoretical model is developed to study the nonuniform temperature distribution in the laser cavit...
Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The f...
This thesis describes the design, optimization, realization and characterization of a wavelength tun...
High-power, broad-area, semiconductor lasers are attractive sources for material processing, aerospa...
The subjects of this thesis can be divided into two main categories: III-V semiconductor lasers and ...
A novel idea of InAlAs native oxide utilized to replace the p-n-p-n thyristor blocking layer and imp...
The vertical integration of two GaAs-based lasers operating at different wavelengths has been achiev...
The authors use high-resolution charge-coupled device based thermoreflectance to derive two dimensio...
[[abstract]]© 2006 Electrochemical Society - We demonstrated a novel method to grow InGaAsP linear g...
A InGaAsP/InP self-aligned, native oxidized buried heterostructure (BH) distributed feedback (DFB) l...
A direct measurement of electron and hole leakage in InGaAsP/InP lasers has been carried out. The ef...
This thesis studies the characterization and simulation of long wavelength indium aluminium gallium ...
Abstract-A buried crescent InGaAsP-InP laser with two active lay-ers was fabricated to study the tem...
A buried crescent InGaAsP-InP laser with two active layers was fabricated to study the temperature b...
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy ...
A theoretical model is developed to study the nonuniform temperature distribution in the laser cavit...
Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The f...
This thesis describes the design, optimization, realization and characterization of a wavelength tun...
High-power, broad-area, semiconductor lasers are attractive sources for material processing, aerospa...
The subjects of this thesis can be divided into two main categories: III-V semiconductor lasers and ...
A novel idea of InAlAs native oxide utilized to replace the p-n-p-n thyristor blocking layer and imp...
The vertical integration of two GaAs-based lasers operating at different wavelengths has been achiev...
The authors use high-resolution charge-coupled device based thermoreflectance to derive two dimensio...
[[abstract]]© 2006 Electrochemical Society - We demonstrated a novel method to grow InGaAsP linear g...
A InGaAsP/InP self-aligned, native oxidized buried heterostructure (BH) distributed feedback (DFB) l...
A direct measurement of electron and hole leakage in InGaAsP/InP lasers has been carried out. The ef...
This thesis studies the characterization and simulation of long wavelength indium aluminium gallium ...
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