Add to ORKGRoom-temperature embedded double-heterostructure injection lasers have been fabricated using selective liquid phase epitaxial growth. Threshold current densities as low as 1.5 kA/cm^2 have been achieved in lasers grown through stripe windows opened in epitaxial GaAlAs masks
International audienceWe report room temperature injection lasing in the yellow–orange spectral rang...
International audienceWe report room temperature injection lasing in the yellow–orange spectral rang...
International audienceWe report room temperature injection lasing in the yellow–orange spectral rang...
Single-growth liquid-phase embedded epitaxy in the GaInAsP/InP system is described, and a new hetero...
GaInAsSb/GaAlAsSb double-heterojunction injection lasers emitting at 2.2 μm with 27% Al in the confi...
A new type of strip-geometry AlGaAs double-heterostructure laser with an embedded optical waveguide ...
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy ...
A very low CW threshold current of 1.65 mA at room temperature was obtained for an uncoated buried-h...
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy ...
Room-temperature operation of GaAs distributed Bragg reflector lasers is reported. The diodes are fa...
Strained-layer Ga0.7In0.3As-AlGaAs-GaAs graded-index separate confinement heterostructure single qua...
GaAs-GaA1As heterostructure injection lasers with performance far superior to previous GaAs lasers h...
Monolithic integration of 1.3-µm groove lasers and metal-insulator-semiconductor field-effect transi...
International audienceWe report on low threshold current density (<400 A cm−2) injection lasing in (...
International audienceWe report room temperature injection lasing in the yellow–orange spectral rang...
International audienceWe report room temperature injection lasing in the yellow–orange spectral rang...
International audienceWe report room temperature injection lasing in the yellow–orange spectral rang...
International audienceWe report room temperature injection lasing in the yellow–orange spectral rang...
Single-growth liquid-phase embedded epitaxy in the GaInAsP/InP system is described, and a new hetero...
GaInAsSb/GaAlAsSb double-heterojunction injection lasers emitting at 2.2 μm with 27% Al in the confi...
A new type of strip-geometry AlGaAs double-heterostructure laser with an embedded optical waveguide ...
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy ...
A very low CW threshold current of 1.65 mA at room temperature was obtained for an uncoated buried-h...
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy ...
Room-temperature operation of GaAs distributed Bragg reflector lasers is reported. The diodes are fa...
Strained-layer Ga0.7In0.3As-AlGaAs-GaAs graded-index separate confinement heterostructure single qua...
GaAs-GaA1As heterostructure injection lasers with performance far superior to previous GaAs lasers h...
Monolithic integration of 1.3-µm groove lasers and metal-insulator-semiconductor field-effect transi...
International audienceWe report on low threshold current density (<400 A cm−2) injection lasing in (...
International audienceWe report room temperature injection lasing in the yellow–orange spectral rang...
International audienceWe report room temperature injection lasing in the yellow–orange spectral rang...
International audienceWe report room temperature injection lasing in the yellow–orange spectral rang...
International audienceWe report room temperature injection lasing in the yellow–orange spectral rang...