lnAs/Ga_(1-x) ln_xSb strained-layer superlattices grown by molecular-beam epitaxy

We report the successful growth of InAs/Ga_(1−x)In_xSb strained‐layer superlattices by molecular‐beam epitaxy. The superlattices are grown on thick, strain‐relaxed InAs or GaSb buffer layers on (100)‐oriented GaAs substrates. A short‐period, heavily strained superlattice at the GaAs interface is found to improve the structural quality of the buffer layer. Arsenic incorporation in nominally pure GaSb layers is found to depend strongly on substrate temperature and As‐background pressure. Best strained‐layer superlattice structural quality is achieved for samples grown at fairly low substrate temperatures (