The maximum optical gain and the spontaneous noise enhancement factor in quantum well structures are expressed as extremely simple functions that are accurate over a wide range of carrier densities. These expressions are used to study the effect of doping on the optical gain and the noise enhancement factor in a 100 Å InGaAs/InP quantum well structure. n-type doping is most effective in reducing the transparency excitation level (laser threshold) and the noise enhancement factor (amplifier noise figure), whereas p-type doping enables increased gain at a given excitation level
From the explosive growth of the telecommunications industry in the past two decades, demand for hig...
The characteristics of FM noise and linewidth of semiconductor optical amplifier without facet mirro...
The effect of quantum-well intermixing on the material gain of a GaInNAs/GaAs quantum-well laser is ...
Abstract We investigate the effect of doping on the parameters of transparency carrier density and p...
A new gain mechanism active in certain quantum well laser diode structures is demonstrated and expla...
We investigate theoretically a number of important issues related to the performance of AlGaAs quant...
The optical gain spectra, unamplified spontaneous emission spectra, and spontaneous radiative effici...
Abstract- In this paper we investigate theoretically the effect of p-doping on the relative intensit...
The Fermi energy dependent stimulated lifetime and carrier densities based on the no-k selection rul...
(DFB) lasers and optical amplifiers will be theoretically analyzed in this paper. For DFB lasers, a ...
We present a systematic theoretical investigation of the influence of p-doping on the gain character...
Automated experimental setups for electrical and optical characterisation, MOVPE growth, laser diode...
Analytical formula for the optical gain based on a simple parabolic-band by introducing theoretical ...
Recently, there is an increasing interest onquantum well (QW) semiconductor optical amplifier in opt...
We discuss a number of theoretical and experimental issues in quantum well lasers with emphasis on t...
From the explosive growth of the telecommunications industry in the past two decades, demand for hig...
The characteristics of FM noise and linewidth of semiconductor optical amplifier without facet mirro...
The effect of quantum-well intermixing on the material gain of a GaInNAs/GaAs quantum-well laser is ...
Abstract We investigate the effect of doping on the parameters of transparency carrier density and p...
A new gain mechanism active in certain quantum well laser diode structures is demonstrated and expla...
We investigate theoretically a number of important issues related to the performance of AlGaAs quant...
The optical gain spectra, unamplified spontaneous emission spectra, and spontaneous radiative effici...
Abstract- In this paper we investigate theoretically the effect of p-doping on the relative intensit...
The Fermi energy dependent stimulated lifetime and carrier densities based on the no-k selection rul...
(DFB) lasers and optical amplifiers will be theoretically analyzed in this paper. For DFB lasers, a ...
We present a systematic theoretical investigation of the influence of p-doping on the gain character...
Automated experimental setups for electrical and optical characterisation, MOVPE growth, laser diode...
Analytical formula for the optical gain based on a simple parabolic-band by introducing theoretical ...
Recently, there is an increasing interest onquantum well (QW) semiconductor optical amplifier in opt...
We discuss a number of theoretical and experimental issues in quantum well lasers with emphasis on t...
From the explosive growth of the telecommunications industry in the past two decades, demand for hig...
The characteristics of FM noise and linewidth of semiconductor optical amplifier without facet mirro...
The effect of quantum-well intermixing on the material gain of a GaInNAs/GaAs quantum-well laser is ...