In this letter we consider the effect of fast thermal fluctuations of electronic state occupancy on the field spectrum of semiconductor lasers and derive for the first time an expression for the resulting power independent linewidth contribution. The magnitude and temperature dependence of this linewidth component agree reasonably well with measurements of a power independent linewidth made by Welford and Mooradian
Semiconductor laser generation begins at a critical injection when the gain and loss spectra touch e...
A model of semiconductor laser noise is presented which includes the carrier density as a dynamical ...
Subsidiary maxima are observed in the field spectra of single mode semiconductor lasers. Measurement...
The spatially dependent equations of motion for a single-mode semiconductor laser including Langevin...
Laser generation begins at a critical injection when the gain and loss spectra touch each other at a...
Spectral-width broadening has many factors. Diode lasers are not always monochromatic due to several...
A novel experimental technique for extracting the linewidth broadening factor of semiconductor laser...
Abstract—The spectral characteristics of a semiconductor laser are altered by injecting additional n...
A simple model for the linewidth enhancement factor alpha and its frequency dependence in semiconduc...
A Van der Pol analysis of laser noise which includes the field intensity dependence of the refractiv...
More and more applications require semiconductor lasers distinguished not only by large modulation b...
A Van der Pol analysis of laser noise which includes the field intensity dependence of the refractiv...
In this Letter, the frequency noise spectrum is analyzed in the experiment of the laser linewidth me...
A statistical numerical simulation method is proposed by which the accumulation of phase fluctuation...
The intrinsic narrow linewidth of quantum cascade lasers (QCLs) promises wide applications such as h...
Semiconductor laser generation begins at a critical injection when the gain and loss spectra touch e...
A model of semiconductor laser noise is presented which includes the carrier density as a dynamical ...
Subsidiary maxima are observed in the field spectra of single mode semiconductor lasers. Measurement...
The spatially dependent equations of motion for a single-mode semiconductor laser including Langevin...
Laser generation begins at a critical injection when the gain and loss spectra touch each other at a...
Spectral-width broadening has many factors. Diode lasers are not always monochromatic due to several...
A novel experimental technique for extracting the linewidth broadening factor of semiconductor laser...
Abstract—The spectral characteristics of a semiconductor laser are altered by injecting additional n...
A simple model for the linewidth enhancement factor alpha and its frequency dependence in semiconduc...
A Van der Pol analysis of laser noise which includes the field intensity dependence of the refractiv...
More and more applications require semiconductor lasers distinguished not only by large modulation b...
A Van der Pol analysis of laser noise which includes the field intensity dependence of the refractiv...
In this Letter, the frequency noise spectrum is analyzed in the experiment of the laser linewidth me...
A statistical numerical simulation method is proposed by which the accumulation of phase fluctuation...
The intrinsic narrow linewidth of quantum cascade lasers (QCLs) promises wide applications such as h...
Semiconductor laser generation begins at a critical injection when the gain and loss spectra touch e...
A model of semiconductor laser noise is presented which includes the carrier density as a dynamical ...
Subsidiary maxima are observed in the field spectra of single mode semiconductor lasers. Measurement...