Add to ORKGA parallel approach for fabricating nanocrystal-based semiconductor–insulator–metal tunnel diodes is presented. The devices consisted of a Au electrode, a monolayer of 38 Å CdSe nanocrystals, an insulating bilayer of eicosanoic acid (C19H39CO2H), and an Al electrode. Each device was approximately 100 µm^2. Conductance measurements at 77 K reveal strong diode behavior and evidence of Coulomb blockade and staircase structure. A single barrier model was found to reproduce the electronic characteristics of these devices
Thiol-capped CdTe nanocrystals were used to fabricate light-emitting diodes, consisting of an emiss...
Cylindrical quantum dots of diameter ∼8 nm and height 3–10 nm, and wires of diameter 50 nm and heigh...
Resonant tunneling through a 4 nm nanocrystal Ge (nc-Ge) layer and a 2.4 nm monolayer of Si colloida...
A parallel approach for fabricating nanocrystal-based semiconductor–insulator–metal tunnel diodes is...
We report a 100,000-fold increase in the conductance of individual CdSe nanorods when they are elect...
We report the results of charge transport studies on single CdTe nanocrystals contacted via evaporat...
The assembly of semiconductor nanocrystals into close packed films suitable for device engineering i...
Strategies for the device integration and electrical characterization of individual colloidal semico...
Semiconductor and metallic nanocrystals exhibit interesting electronic transport behavior as a resul...
A parallel technique for fabricating single-electron, solid-state capacitance devices from ordered, ...
We report on a chemical approach to fabricating double-barrier tunneling junction (DBTJ) for room-te...
CdSe nanocrystalline thin films have been synthesized on indium tin oxide (ITO) substrates by an ele...
As semiconductor manufacturing pushes towards smaller and faster transistors, a parallel goal exists...
Colloidal semiconductor nanocrystals (NCs) are a class of materials that has rapidly gained prominen...
It is challenging for conventional top-down lithography to fabricate reproducible devices very close...
Thiol-capped CdTe nanocrystals were used to fabricate light-emitting diodes, consisting of an emiss...
Cylindrical quantum dots of diameter ∼8 nm and height 3–10 nm, and wires of diameter 50 nm and heigh...
Resonant tunneling through a 4 nm nanocrystal Ge (nc-Ge) layer and a 2.4 nm monolayer of Si colloida...
A parallel approach for fabricating nanocrystal-based semiconductor–insulator–metal tunnel diodes is...
We report a 100,000-fold increase in the conductance of individual CdSe nanorods when they are elect...
We report the results of charge transport studies on single CdTe nanocrystals contacted via evaporat...
The assembly of semiconductor nanocrystals into close packed films suitable for device engineering i...
Strategies for the device integration and electrical characterization of individual colloidal semico...
Semiconductor and metallic nanocrystals exhibit interesting electronic transport behavior as a resul...
A parallel technique for fabricating single-electron, solid-state capacitance devices from ordered, ...
We report on a chemical approach to fabricating double-barrier tunneling junction (DBTJ) for room-te...
CdSe nanocrystalline thin films have been synthesized on indium tin oxide (ITO) substrates by an ele...
As semiconductor manufacturing pushes towards smaller and faster transistors, a parallel goal exists...
Colloidal semiconductor nanocrystals (NCs) are a class of materials that has rapidly gained prominen...
It is challenging for conventional top-down lithography to fabricate reproducible devices very close...
Thiol-capped CdTe nanocrystals were used to fabricate light-emitting diodes, consisting of an emiss...
Cylindrical quantum dots of diameter ∼8 nm and height 3–10 nm, and wires of diameter 50 nm and heigh...
Resonant tunneling through a 4 nm nanocrystal Ge (nc-Ge) layer and a 2.4 nm monolayer of Si colloida...