The cavity ringdown technique has been implemented for electronic spectroscopy of jet-cooled CuSi produced in a pulsed UV laser vaporization plasma reactor. A time-of-flight mass spectrometer is used to simultaneously monitor species produced in the supersonic expansion and allows correlation studies to be performed. Seven rotationally resolved vibronic bands have been measured near 400 nm, yielding spectroscopic constants for the 2Sigma ground and excited states. Vibronic isotope shifts, together with rotational line positions, permit the unambiguous determination of the spectral carrier and vibronic assignment. Since no ab initio studies for the CuSi molecule exist, a comparison to ab initio studies of the related NiSi molecule is present...
Clusters of the transition metals were generated by laser vaporisation of a sample of t...
Includes bibliographical references (p. ).A unique instrument was constructed and used to generate a...
The thermal stability of nanometer-sized Cu particles on a 400–500 nm thick SiO2 layer on top of a S...
$^{1}$ J. J. Schere, J. B. Paul, C. P. Collier, and R. J. Saykally, J. phys. Chem., in pressAuthor I...
The cavity ringdown technique has been employed for the first spectroscopic characterization of the ...
The cavity ringdown technique has been employed for the spectroscopic characterization of the AuSi m...
The low-lying electronic states of SiCu, SiCu^+, and SiCu^− have been studied using a variety of hig...
In this study, synchrotron-based x-ray absorption microspectroscopy (mu-XAS) is applied to identify...
In this study, synchrotron-based x-ray absorption microspectroscopy (mu-XAS) is applied to identifyi...
The reactions of copper and amorphous silicon were studied by in-situ transmission electron microsco...
$^{1}$. A. O'Keefe and D.A. Deacon. Rev. Sci. Instrum., 59, 2544 (1988). $^{2}$. A. O'Keefe, J.J. Sc...
Author Institution: Department of Chemistry, University of California; Department of Chemistry, Deac...
Journal ArticleFluorescence excitation spectra recorded for the A-X system of jet-cooled Cu2 show co...
Author Institution: National Institute of Standards and Technology, GaithersburgAn all electron ab-i...
A novel technique for the production of metal and semiconductor clusters based on laser vaporization...
Clusters of the transition metals were generated by laser vaporisation of a sample of t...
Includes bibliographical references (p. ).A unique instrument was constructed and used to generate a...
The thermal stability of nanometer-sized Cu particles on a 400–500 nm thick SiO2 layer on top of a S...
$^{1}$ J. J. Schere, J. B. Paul, C. P. Collier, and R. J. Saykally, J. phys. Chem., in pressAuthor I...
The cavity ringdown technique has been employed for the first spectroscopic characterization of the ...
The cavity ringdown technique has been employed for the spectroscopic characterization of the AuSi m...
The low-lying electronic states of SiCu, SiCu^+, and SiCu^− have been studied using a variety of hig...
In this study, synchrotron-based x-ray absorption microspectroscopy (mu-XAS) is applied to identify...
In this study, synchrotron-based x-ray absorption microspectroscopy (mu-XAS) is applied to identifyi...
The reactions of copper and amorphous silicon were studied by in-situ transmission electron microsco...
$^{1}$. A. O'Keefe and D.A. Deacon. Rev. Sci. Instrum., 59, 2544 (1988). $^{2}$. A. O'Keefe, J.J. Sc...
Author Institution: Department of Chemistry, University of California; Department of Chemistry, Deac...
Journal ArticleFluorescence excitation spectra recorded for the A-X system of jet-cooled Cu2 show co...
Author Institution: National Institute of Standards and Technology, GaithersburgAn all electron ab-i...
A novel technique for the production of metal and semiconductor clusters based on laser vaporization...
Clusters of the transition metals were generated by laser vaporisation of a sample of t...
Includes bibliographical references (p. ).A unique instrument was constructed and used to generate a...
The thermal stability of nanometer-sized Cu particles on a 400–500 nm thick SiO2 layer on top of a S...