In this letter a method to simultaneously measure the physical and the polarization thickness of a 90° domain wall in a ferroelectric perovskite is presented. This method combines accurate atomic force microscopy and piezoresponse force microscopy scans of the same area with little drift and an analysis of the entire scanned area. It is found that the physical thickness is significantly narrower (about seven and a half times) than the polarization thickness in a 90° domain wall in BaTiO3. Evidence of the trapping of defects at such domain walls is also found
Intrinsic and extrinsic properties of ferroelectric materials are known to have strong dependencies ...
Ferroelectric compounds are the basis of traditional electronic ceramic devices. The ferroelectric r...
This chapter describes the principles, theoretical background, recent developments, and applications...
Ferroelectric domain structure in BaTiO3 ceramics was studied with nanoscale spatial resolution befo...
Ferroelectric materials are characterized by their spontaneous polarization, whose direction can be ...
The research was made possible by President of Russian Federation grant for young scientists (MK-365...
The authors use the PQEq force field based on quantum mechanics studies to provide a first-principle...
We have investigated the effect of texture on in-plane (IPP) and out- of plane (OPP) polarizations o...
Les matériaux ferroélectriques sont caractérisés par l'existence d'une polarisation électrique spont...
The domain structure of ferroelectric and multiferroic materials can have a significant effect on pi...
The domain structure of ferroelectric and multiferroic materials can have a significant effect on pi...
The domain structure of ferroelectric and multiferroic materials can have a significant effect on pi...
Intrinsic and extrinsic properties of ferroelectric materials are known to have strong dependencies ...
Intrinsic and extrinsic properties of ferroelectric materials are known to have strong dependencies ...
Intrinsic and extrinsic properties of ferroelectric materials are known to have strong dependencies ...
Intrinsic and extrinsic properties of ferroelectric materials are known to have strong dependencies ...
Ferroelectric compounds are the basis of traditional electronic ceramic devices. The ferroelectric r...
This chapter describes the principles, theoretical background, recent developments, and applications...
Ferroelectric domain structure in BaTiO3 ceramics was studied with nanoscale spatial resolution befo...
Ferroelectric materials are characterized by their spontaneous polarization, whose direction can be ...
The research was made possible by President of Russian Federation grant for young scientists (MK-365...
The authors use the PQEq force field based on quantum mechanics studies to provide a first-principle...
We have investigated the effect of texture on in-plane (IPP) and out- of plane (OPP) polarizations o...
Les matériaux ferroélectriques sont caractérisés par l'existence d'une polarisation électrique spont...
The domain structure of ferroelectric and multiferroic materials can have a significant effect on pi...
The domain structure of ferroelectric and multiferroic materials can have a significant effect on pi...
The domain structure of ferroelectric and multiferroic materials can have a significant effect on pi...
Intrinsic and extrinsic properties of ferroelectric materials are known to have strong dependencies ...
Intrinsic and extrinsic properties of ferroelectric materials are known to have strong dependencies ...
Intrinsic and extrinsic properties of ferroelectric materials are known to have strong dependencies ...
Intrinsic and extrinsic properties of ferroelectric materials are known to have strong dependencies ...
Ferroelectric compounds are the basis of traditional electronic ceramic devices. The ferroelectric r...
This chapter describes the principles, theoretical background, recent developments, and applications...