Add to ORKGThe thermal stability of reactively sputtered RuO2 films is investigated from the point of view of their application as diffusion barriers in silicon contact metallizations with an Al overlayer. Backscattering spectra of Si/RuO2/Al samples and electrical measurements on shallow junction diodes with Si/TiSi2.3/RuO2/Al contacts both show that RuO2 films are effective diffusion barriers between Al and Si for 30-min annealing at temperatures as high as 600°C
As a very promising material of copper diffusion barrier for next generation microelectronics, Ru ha...
The TaSiO6 films, ~8Å thick, were formed by sputter deposition of Ta onto ultrathin SiO2 substrates ...
Ruthenium dioxide films were prepared by radio-frequency magnetron sputtering onto Si and Ti substra...
Ruthenium and ruthenium dioxide thin films have shown great promise in various applications, such as...
Ruthenium dioxide (RuO2) is a stable conductive and semi-transparent oxide. This paper provides a co...
Various structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm)/Si were prepared by sputtering a...
RuO2 films were deposited on SiO2 (300 nm)/N++Si substrates using radio frequency magnetron sputteri...
Ru-riched and equiatomic Ru–Al multilayered thin films were fabricated on Si and Inconel 617 s...
RuO2-SiO2 composite thin films were deposited on oxidised silicon wafers by reactive sputtering of R...
Thin ruthenium films are used in several applications such as catalysis, electronics and optical coa...
Ternary films about 200 nm thick of composition Ru20Si15O65 have been synthesized by reactive rf mag...
This thesis focuses on the study of physical and chemical processes occurring during growth and ther...
Indium oxide (In2O3) films were prepared by reactive rf sputtering of an In target in O2/Ar plasma. ...
The Ru-Ta-Si-O, Ta-Si-N-O, and Ru-Ta-Zr-O phase diagrams are important for predicting reactions at i...
The thermal stability of RuO2/Si(100) films in air was studied using ex situ synchrotron x-ray scatt...
As a very promising material of copper diffusion barrier for next generation microelectronics, Ru ha...
The TaSiO6 films, ~8Å thick, were formed by sputter deposition of Ta onto ultrathin SiO2 substrates ...
Ruthenium dioxide films were prepared by radio-frequency magnetron sputtering onto Si and Ti substra...
Ruthenium and ruthenium dioxide thin films have shown great promise in various applications, such as...
Ruthenium dioxide (RuO2) is a stable conductive and semi-transparent oxide. This paper provides a co...
Various structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm)/Si were prepared by sputtering a...
RuO2 films were deposited on SiO2 (300 nm)/N++Si substrates using radio frequency magnetron sputteri...
Ru-riched and equiatomic Ru–Al multilayered thin films were fabricated on Si and Inconel 617 s...
RuO2-SiO2 composite thin films were deposited on oxidised silicon wafers by reactive sputtering of R...
Thin ruthenium films are used in several applications such as catalysis, electronics and optical coa...
Ternary films about 200 nm thick of composition Ru20Si15O65 have been synthesized by reactive rf mag...
This thesis focuses on the study of physical and chemical processes occurring during growth and ther...
Indium oxide (In2O3) films were prepared by reactive rf sputtering of an In target in O2/Ar plasma. ...
The Ru-Ta-Si-O, Ta-Si-N-O, and Ru-Ta-Zr-O phase diagrams are important for predicting reactions at i...
The thermal stability of RuO2/Si(100) films in air was studied using ex situ synchrotron x-ray scatt...
As a very promising material of copper diffusion barrier for next generation microelectronics, Ru ha...
The TaSiO6 films, ~8Å thick, were formed by sputter deposition of Ta onto ultrathin SiO2 substrates ...
Ruthenium dioxide films were prepared by radio-frequency magnetron sputtering onto Si and Ti substra...