Add to ORKGThe selective growth of nanometer scale GaAs wire and dot structures using metalorganic vapor phase epitaxy is demonstrated. Spectrally resolved cathodoluminescence images as well as spectra from single dots and wires are presented. A blue shifting of the GaAs peak is observed as the size scale of the wires and dots decreases
138 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.In light of the substantial p...
Abstract: Selective epitaxial growth of Sil-,Ge, was studied with the aim to fabricate quantum wires...
III--V -puolijohteiden nanolangat ovat varteenotettava alusta seuraavan sukupolven optoelektroniikan...
A shallow zinc diffusion technique is used to selectively disorder a GaAs quantum well creating nano...
We fabricated GaAs/AlGaAs core-shell nanowires by using selective-area metalorganic vapor phase epit...
We report on the growth of surface-bound, vertically oriented one-dimensional III/V nanostructures, ...
Characterization of low-dimensional semiconductor structures is a challenging task. The thesis is ba...
A new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrate...
Selective growth of InGaAsInGaAs quantum dots on GaAsGaAs is reported. It is demonstrated that selec...
Free-standing epitaxially grown nanowires provide a controlled growth system and an optimal interfac...
The unique self-organizing growth mechanisms on planar and patterned high-index substrates leading t...
One−dimensional semiconductor nanowires are a subject of intensive research primarily due to their n...
Au-catalyzed self-assembly of GaAs nanowires on (1¯1¯1¯)B GaAs by metalorganic vapor phase epitaxy i...
This thesis concerns growth and characterization of gold-particle seeded nanowires of III-V semicond...
NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in ...
138 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.In light of the substantial p...
Abstract: Selective epitaxial growth of Sil-,Ge, was studied with the aim to fabricate quantum wires...
III--V -puolijohteiden nanolangat ovat varteenotettava alusta seuraavan sukupolven optoelektroniikan...
A shallow zinc diffusion technique is used to selectively disorder a GaAs quantum well creating nano...
We fabricated GaAs/AlGaAs core-shell nanowires by using selective-area metalorganic vapor phase epit...
We report on the growth of surface-bound, vertically oriented one-dimensional III/V nanostructures, ...
Characterization of low-dimensional semiconductor structures is a challenging task. The thesis is ba...
A new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrate...
Selective growth of InGaAsInGaAs quantum dots on GaAsGaAs is reported. It is demonstrated that selec...
Free-standing epitaxially grown nanowires provide a controlled growth system and an optimal interfac...
The unique self-organizing growth mechanisms on planar and patterned high-index substrates leading t...
One−dimensional semiconductor nanowires are a subject of intensive research primarily due to their n...
Au-catalyzed self-assembly of GaAs nanowires on (1¯1¯1¯)B GaAs by metalorganic vapor phase epitaxy i...
This thesis concerns growth and characterization of gold-particle seeded nanowires of III-V semicond...
NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in ...
138 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.In light of the substantial p...
Abstract: Selective epitaxial growth of Sil-,Ge, was studied with the aim to fabricate quantum wires...
III--V -puolijohteiden nanolangat ovat varteenotettava alusta seuraavan sukupolven optoelektroniikan...