Add to ORKGReactively sputtered tungsten nitride (WxN1–x) layers are investigated as diffusion barriers between Al overlayers and Si shallow n + -p junctions. Both amorphous W80 N20 and polycrystalline W60 N40 films were found to be very effective in preserving the integrity of the n + -p diodes for 30-min vacuum annealing up to 575 °C. Diode failure at higher temperatures is caused by localized penetration of Al into through the WxN1–x barriers. The effectiveness of the barrier decreases for polycrystalline W90 N10 and is worse for pure W
Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using ch...
W-Si-N thin films were deposited via rf-magnetron sputtering from a W5Si3 target in Ar/N-2 reactive ...
The integration of copper (Cu) and dielectric materials has been outlined in the International Techn...
The thermal stability of reactively sputtered tungsten–nitrogen alloy thin films is investigated for...
M–Si–N and M–Si (M=Mo, Ta, or W) thin films, reactively sputtered from M5Si3 and WSi2 targets, are e...
- A partir de la RBS et de la diffraction X, nous montrons qu'au dessus d'une épaisseur critique de ...
W1.5N films grown by ALD from WF6, NH3, C2H4 and SiH4 as precursors were tested as Cu diffusion barr...
W1.5N films grown by ALD from WF6, NH3, C2H4 and SiH4 as precursors were tested as Cu diffusion barr...
Tungsten nitride (WNx) is a potentially strong candidate for Cu diffusion barrier. The WNx. films we...
The WNx films were deposited by two types of sputtering system: (1) rf magnetron sputtering system, ...
We show that the thermal instability that is observed in Schottky diodes with an Al film on NiSi con...
The thermal stability of rf magnetron sputtered tungsten boron nitride (W-B-N) thin films has been i...
In modern integrated circuits with Cu interconnects a diffusion barrier is used between the dielectr...
New inspirations respecting the idea to stabilize semiconductor contact metallization by incorporati...
Amorphous W-Zr and W-N alloys were investigated as diffusion barriers in silicon metallization schem...
Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using ch...
W-Si-N thin films were deposited via rf-magnetron sputtering from a W5Si3 target in Ar/N-2 reactive ...
The integration of copper (Cu) and dielectric materials has been outlined in the International Techn...
The thermal stability of reactively sputtered tungsten–nitrogen alloy thin films is investigated for...
M–Si–N and M–Si (M=Mo, Ta, or W) thin films, reactively sputtered from M5Si3 and WSi2 targets, are e...
- A partir de la RBS et de la diffraction X, nous montrons qu'au dessus d'une épaisseur critique de ...
W1.5N films grown by ALD from WF6, NH3, C2H4 and SiH4 as precursors were tested as Cu diffusion barr...
W1.5N films grown by ALD from WF6, NH3, C2H4 and SiH4 as precursors were tested as Cu diffusion barr...
Tungsten nitride (WNx) is a potentially strong candidate for Cu diffusion barrier. The WNx. films we...
The WNx films were deposited by two types of sputtering system: (1) rf magnetron sputtering system, ...
We show that the thermal instability that is observed in Schottky diodes with an Al film on NiSi con...
The thermal stability of rf magnetron sputtered tungsten boron nitride (W-B-N) thin films has been i...
In modern integrated circuits with Cu interconnects a diffusion barrier is used between the dielectr...
New inspirations respecting the idea to stabilize semiconductor contact metallization by incorporati...
Amorphous W-Zr and W-N alloys were investigated as diffusion barriers in silicon metallization schem...
Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using ch...
W-Si-N thin films were deposited via rf-magnetron sputtering from a W5Si3 target in Ar/N-2 reactive ...
The integration of copper (Cu) and dielectric materials has been outlined in the International Techn...