Due to recent advances in computational hardware and code accessibility, state-of-the-art calculations are currently employed to investigate materials at the nanoscale with varying levels of accuracy. As such, this dissertation highlights a series of materials ranging from one-dimensional wires, to reactive surfaces, to bulk crystals. Initial characterizations for all considered materials are carried out using density functional theory where additional approximations are utilized to obtain more complex quantities. For Millon's salt, first-principles calculations confirm a quasi-one-dimensional description where the metallic backbone influences electronic properties while hydrogen-bonding between ligands results in structural stability. We...
We have systematically investigated structural, electronic and magnetic properties of very thin TiOx...
This chapter aims to provide researchers in the field of photovoltaics with the valuable information...
Wide band gap (Eg > 3.1 eV) semiconductors are ubiquitous in many present day industrial application...
Anatase TiO2 nanocrystals have received considerable attention owing to their promising applications...
First-principles calculations of the electronic structure of reduced anatase TiO2 nanoparticles are ...
The effect of N-doping of titania (TiO2) nanoparticles (NPs) on their reduction through neutral O va...
Mixed phase rutile/anatase catalysts show increased reactivity compared with the pure phases alone. ...
The structural and electronic properties of anatase TiO2 nanocrystals (NCs) are investigated through...
We use first-principles computations based on Ehrenfest dynamics and density functional theory to st...
Thesis: Ph. D. in Mechanical Engineering and Computation, Massachusetts Institute of Technology, Dep...
We have performed first-principles calculations on anatase TiO2 nanowires (NWs) to investigate the d...
The electronic properties of quasi-one-dimensional anatase TiO2 nanostructures, in the form of thin ...
The structural and electronic properties of anatase TiO2 nanocrystals (NCs) are investigated through...
We address one of the main challenges to TiO2 photocatalysis, namely band gap narrowing, by combinin...
In this work, we model TiO2(B) angstrom-scale wires derived from TiO2(B) (001) ultrathin sheets. By ...
We have systematically investigated structural, electronic and magnetic properties of very thin TiOx...
This chapter aims to provide researchers in the field of photovoltaics with the valuable information...
Wide band gap (Eg > 3.1 eV) semiconductors are ubiquitous in many present day industrial application...
Anatase TiO2 nanocrystals have received considerable attention owing to their promising applications...
First-principles calculations of the electronic structure of reduced anatase TiO2 nanoparticles are ...
The effect of N-doping of titania (TiO2) nanoparticles (NPs) on their reduction through neutral O va...
Mixed phase rutile/anatase catalysts show increased reactivity compared with the pure phases alone. ...
The structural and electronic properties of anatase TiO2 nanocrystals (NCs) are investigated through...
We use first-principles computations based on Ehrenfest dynamics and density functional theory to st...
Thesis: Ph. D. in Mechanical Engineering and Computation, Massachusetts Institute of Technology, Dep...
We have performed first-principles calculations on anatase TiO2 nanowires (NWs) to investigate the d...
The electronic properties of quasi-one-dimensional anatase TiO2 nanostructures, in the form of thin ...
The structural and electronic properties of anatase TiO2 nanocrystals (NCs) are investigated through...
We address one of the main challenges to TiO2 photocatalysis, namely band gap narrowing, by combinin...
In this work, we model TiO2(B) angstrom-scale wires derived from TiO2(B) (001) ultrathin sheets. By ...
We have systematically investigated structural, electronic and magnetic properties of very thin TiOx...
This chapter aims to provide researchers in the field of photovoltaics with the valuable information...
Wide band gap (Eg > 3.1 eV) semiconductors are ubiquitous in many present day industrial application...