Due to low dielectric loss and low cost, glass is developed as a promising material for advanced interposers in 2.5-D and 3-D integration. In this paper, through glass vias (TGVs) are used to implement inductors for minimal footprint and large quality factor. Based on the proposed physical structure, the impact of various process and design parameters on the electrical characteristics of TGV inductors is investigated with 3-D electromagnetic simulator HFSS. It is observed that TGV inductors have identical inductance and larger quality factor in comparison with their through silicon via counterparts. Using TGV inductors and parallel plate capacitors, a compact 3-D band-pass filter (BPF) is designed and analyzed. Compared with some reported B...
Advancements in very large scale integration (VLSI) technology have led to unprecedented transistor ...
The through silicon via technology is a promising and preferred way to realize the reliable inter...
An innovative structure for thin-film band-pass filters was proposed and analyzed. This structure wa...
System scaling by 3D packaging is now considered a critical technology enabler for continued increas...
The development of 5G mobile communication created the need for high-frequency communication systems...
Interposers for SiP will become more and more important for advanced electronic systems. But through...
Three dimensional (3D) packaging technologies are being developed to address the escalating demand f...
This letter reports on a new low-loss and high linearity3-D wafer-level interposer technology enable...
Currently glass is mainly used as unstructured wafers or panels with the highest market share in gla...
here is an increasing demand for higher bandwidth (BW) between logic and memory ICs for future smart...
This paper reports on successful fabrication of metal through glass via (TGV) for low-loss high-line...
In this paper, Silex Microsystems, the world's largest Pure-Play MEMS foundry, together with partner...
Glass is well established as wafer or panel substrate for applications like capping of image sensors...
Three-dimensional (3D) inductors using high aspect ratio (10:1); thru-wafer via (TWV) technology in ...
The advent of smart and wearable systems along with their Internet of Things (IoT) applications are ...
Advancements in very large scale integration (VLSI) technology have led to unprecedented transistor ...
The through silicon via technology is a promising and preferred way to realize the reliable inter...
An innovative structure for thin-film band-pass filters was proposed and analyzed. This structure wa...
System scaling by 3D packaging is now considered a critical technology enabler for continued increas...
The development of 5G mobile communication created the need for high-frequency communication systems...
Interposers for SiP will become more and more important for advanced electronic systems. But through...
Three dimensional (3D) packaging technologies are being developed to address the escalating demand f...
This letter reports on a new low-loss and high linearity3-D wafer-level interposer technology enable...
Currently glass is mainly used as unstructured wafers or panels with the highest market share in gla...
here is an increasing demand for higher bandwidth (BW) between logic and memory ICs for future smart...
This paper reports on successful fabrication of metal through glass via (TGV) for low-loss high-line...
In this paper, Silex Microsystems, the world's largest Pure-Play MEMS foundry, together with partner...
Glass is well established as wafer or panel substrate for applications like capping of image sensors...
Three-dimensional (3D) inductors using high aspect ratio (10:1); thru-wafer via (TWV) technology in ...
The advent of smart and wearable systems along with their Internet of Things (IoT) applications are ...
Advancements in very large scale integration (VLSI) technology have led to unprecedented transistor ...
The through silicon via technology is a promising and preferred way to realize the reliable inter...
An innovative structure for thin-film band-pass filters was proposed and analyzed. This structure wa...