This dissertation describes experiments undertaken to develop techniques required to develop IV-VI lasers grown on silicon. A review of the IV-VI materials system, diode laser structures, recent IV-VI laser results, epitaxial growth techniques, and thermal modeling results introduces the reader to the structures and materials to be discussed. Designs for three different IV-VI laser structures on silicon follow. Three types of experimental structures are investigated next: those grown on BaF$\sb2$ substrates by liquid phase epitaxy (LPE), those grown on silicon by molecular phase epitaxy (MBE), and those grown on silicon by a combination of MBE and LPE. The author's recommendations for future work sum up the body of the text. Five appendices...
The paper presents the results of the application of MOCVD growth technique for formation of the GaA...
The optical properties of silicon materials have been recognized in recently years, and their applic...
We will present our work on epitaxially grown III-V on silicon DFB laser arrays, including results o...
The growth of reliable III-V semiconductor lasers on Si would be a significant step toward the fabri...
International audienceThe direct epitaxy of III-V lasers on Silicon (Si) substrates has been conside...
The molecular beam epitaxial growths of ZnSe-based II-VI materials were investigated in this researc...
The development of laser technology based on silicon continues to be of key importance for the advan...
The development of laser technology based on silicon continues to be of key importance for the advan...
The Si epitaxial films were grown on (100) Si substrates at 650 ~ and 700 ~ by CO2 laser CVD using S...
A potential solution to the operating temperature problem is to employ epitaxial lift-off techniques...
This thesis investigates the growth, fabrication, and performance of III-V semiconductorquantum dot ...
For approximately 30 years, researchers have been trying to exploit the wide direct bandgap of II-VI...
Optoelectronic integration on silicon is an area of increasing interest for both physicists and the ...
Further reduction of the price of photovoltaic (PV) modules is critical to its wide-spread adoption,...
This work describes novel fabrication processes and the advantages of metalorganic chemical vapor de...
The paper presents the results of the application of MOCVD growth technique for formation of the GaA...
The optical properties of silicon materials have been recognized in recently years, and their applic...
We will present our work on epitaxially grown III-V on silicon DFB laser arrays, including results o...
The growth of reliable III-V semiconductor lasers on Si would be a significant step toward the fabri...
International audienceThe direct epitaxy of III-V lasers on Silicon (Si) substrates has been conside...
The molecular beam epitaxial growths of ZnSe-based II-VI materials were investigated in this researc...
The development of laser technology based on silicon continues to be of key importance for the advan...
The development of laser technology based on silicon continues to be of key importance for the advan...
The Si epitaxial films were grown on (100) Si substrates at 650 ~ and 700 ~ by CO2 laser CVD using S...
A potential solution to the operating temperature problem is to employ epitaxial lift-off techniques...
This thesis investigates the growth, fabrication, and performance of III-V semiconductorquantum dot ...
For approximately 30 years, researchers have been trying to exploit the wide direct bandgap of II-VI...
Optoelectronic integration on silicon is an area of increasing interest for both physicists and the ...
Further reduction of the price of photovoltaic (PV) modules is critical to its wide-spread adoption,...
This work describes novel fabrication processes and the advantages of metalorganic chemical vapor de...
The paper presents the results of the application of MOCVD growth technique for formation of the GaA...
The optical properties of silicon materials have been recognized in recently years, and their applic...
We will present our work on epitaxially grown III-V on silicon DFB laser arrays, including results o...