The present state of quantitative secondary ion mass spectrometry (SIMS) is analysed critically. Because of the strong gain in sensitivity obtained by loading the instantaneous sample surface with either oxygen or cesium, chemically enhanced secondary ion emission is discussed almost exclusively. The implications brought about by a fixed experimental geometry and by the mass dependence of instrumental factors are discussed in some detail. Normal beam incidence is to be prefered because of the high steady state concentration of oxygen attainable. Positive secondary ion yields of elements emitted from a common matrix under conditions of complete saturation with oxygen are proportional to exp(-βEi), where Ei is the respective ionization p...
In this lecture the essential results of a comprehensive recent review on Cs controlled secondary io...
A review with 182 refs. is given on phys. phenomena such as sputtering, ion emission, ionization and...
A review with 182 refs. is given on phys. phenomena such as sputtering, ion emission, ionization and...
This paper reviews the current state of Secondary Ion Mass Spectrometry (SIMS) applied to the invest...
Secondary Ion Mass Spectrometry presents many advantages like high sensitivity and excellent mass re...
Secondary Ion Mass Spectrometry (SIMS) is one of the most versatile, and in recent years among the m...
The major hurdle in quantitative analysis by SIMS is the inconsistency and non-predictability of ion...
The major hurdle in quantitative analysis by SIMS is the inconsistency and non-predictability of ion...
Exposure of ion bombarded solids to Cs gives rise to a very strong enhancement of the yields of nega...
In Secondary Ion Mass Spectrometry (SIMS) a focused beam of energetic ions (so-called primary ions) ...
The aim is to investigate the processes taking place at interaction of the chemically-active ion bea...
Quantitative analysis using MCs+ secondary ions has long been impossible because sample loading with...
This article describes a Ga+ focused ion beam secondary ion mass spectroscopy system, and measures s...
This article describes a Ga+ focused ion beam secondary ion mass spectroscopy system, and measures s...
To fabricate efficient, cost-effective and faster devices, the semiconductor industry has been downs...
In this lecture the essential results of a comprehensive recent review on Cs controlled secondary io...
A review with 182 refs. is given on phys. phenomena such as sputtering, ion emission, ionization and...
A review with 182 refs. is given on phys. phenomena such as sputtering, ion emission, ionization and...
This paper reviews the current state of Secondary Ion Mass Spectrometry (SIMS) applied to the invest...
Secondary Ion Mass Spectrometry presents many advantages like high sensitivity and excellent mass re...
Secondary Ion Mass Spectrometry (SIMS) is one of the most versatile, and in recent years among the m...
The major hurdle in quantitative analysis by SIMS is the inconsistency and non-predictability of ion...
The major hurdle in quantitative analysis by SIMS is the inconsistency and non-predictability of ion...
Exposure of ion bombarded solids to Cs gives rise to a very strong enhancement of the yields of nega...
In Secondary Ion Mass Spectrometry (SIMS) a focused beam of energetic ions (so-called primary ions) ...
The aim is to investigate the processes taking place at interaction of the chemically-active ion bea...
Quantitative analysis using MCs+ secondary ions has long been impossible because sample loading with...
This article describes a Ga+ focused ion beam secondary ion mass spectroscopy system, and measures s...
This article describes a Ga+ focused ion beam secondary ion mass spectroscopy system, and measures s...
To fabricate efficient, cost-effective and faster devices, the semiconductor industry has been downs...
In this lecture the essential results of a comprehensive recent review on Cs controlled secondary io...
A review with 182 refs. is given on phys. phenomena such as sputtering, ion emission, ionization and...
A review with 182 refs. is given on phys. phenomena such as sputtering, ion emission, ionization and...