The broadening effects encountered in sputter depth profiling are reviewed in some detail. Discussion is restricted to cases where beam-induced microtopographical changes are of negligible importance. Qualitatively, the broadening effects are due to the fact that most of the energy of the incident beam is consumed for damage production in the bulk of the sample rather than for sputter ejection of surface atoms. Available models of collisional mixing are shown to describe some experimental results surprisingly well. However, experiment and theory are often not directly comparable. Analytical models predict only the smearing of a tracer atom distribution in the bulk of the sample. The sputter profile, on the other hand, constitutes a plot of ...
The inhomogeneity of ion bombardment, the angular dependence of sputtering yields and the crystallin...
The analytical steady-state statistical sputtering model (SS-SSM) is utilized to interpret molecular...
Résumé- La résolution en profondeur des profils de pulvérisa-tion a été déterminée en utilisant des ...
A thin native silicon oxide layer, covered with hydrogen- and carbon-containing impurities, was sand...
Depth profiling by sputtering in combination with the detection of mass selected secondary ions is a...
Samples composed of alternating layers of 30Si and 28Si were sputter depth profiled at near normal i...
Following a brief historical background, the concepts and the present state of sputter-depth profili...
We have studied the mixing of a bilayer sample interface. The AuPt bilayer was sectioned in a SIMS a...
The beginning of applied surface and interface analysis can be traced back to the year 1970 by extra...
Applications of semiconductor sputter profiling in the near future will demand nm or even sub-nm dep...
The correlation of the depth of origin (DoO) of sputtered atoms with relevant properties of the bomb...
A model for predicting depth profiles due to energetic particle bombardment based on the RMS roughne...
A quantitative method is described for measuring the sputtered depth profile of an ion beam and calc...
Atomic mixing and preferential sputtering impose a depth resolution limit on the use of sputter sect...
The roughness of a surface is known to have a strong influence on the sputtering process. Commonly u...
The inhomogeneity of ion bombardment, the angular dependence of sputtering yields and the crystallin...
The analytical steady-state statistical sputtering model (SS-SSM) is utilized to interpret molecular...
Résumé- La résolution en profondeur des profils de pulvérisa-tion a été déterminée en utilisant des ...
A thin native silicon oxide layer, covered with hydrogen- and carbon-containing impurities, was sand...
Depth profiling by sputtering in combination with the detection of mass selected secondary ions is a...
Samples composed of alternating layers of 30Si and 28Si were sputter depth profiled at near normal i...
Following a brief historical background, the concepts and the present state of sputter-depth profili...
We have studied the mixing of a bilayer sample interface. The AuPt bilayer was sectioned in a SIMS a...
The beginning of applied surface and interface analysis can be traced back to the year 1970 by extra...
Applications of semiconductor sputter profiling in the near future will demand nm or even sub-nm dep...
The correlation of the depth of origin (DoO) of sputtered atoms with relevant properties of the bomb...
A model for predicting depth profiles due to energetic particle bombardment based on the RMS roughne...
A quantitative method is described for measuring the sputtered depth profile of an ion beam and calc...
Atomic mixing and preferential sputtering impose a depth resolution limit on the use of sputter sect...
The roughness of a surface is known to have a strong influence on the sputtering process. Commonly u...
The inhomogeneity of ion bombardment, the angular dependence of sputtering yields and the crystallin...
The analytical steady-state statistical sputtering model (SS-SSM) is utilized to interpret molecular...
Résumé- La résolution en profondeur des profils de pulvérisa-tion a été déterminée en utilisant des ...