Low energy range distributions of ¹⁰B and ¹¹B in amorphous and crystalline silicon.

Low energy SIMS has been used to determine range distributions of boron in amorphous and crystalline silicon in the energy regions 1-40 keV and 5-10 keV, respectively. Up to 20 keV the range distributions of 10B and 11B in amorphous silicon are identical. A small isotope effect is seen at 40 keV. Comparison with previously reported SIMS data at energies E{slanted equal to or greater-than}30 keV shows excellent agreement. Calculated ranges for E{slanted equal to or greater-than}10 keV are smaller by up to 20% (at 10 keV). Channeled range distributions in Si(100) support the assumption of velocity proportional electronic stopping, the respective cross section being in good agreement with a previously reported number determined at energies above 100 keV