Plasma Enhanced Chemical Vapor Deposition (PECVD) of Silicon Dioxide (SiO2) Using Oxford Instruments System 100 PECVD

Modeling of SiO2 deposition from mixtures of tetraethoxysilane and ozone in an APCVD industrial reactor

J.-P. Nieto
B. Caussat
J.-P. Couderc
S. Coletti
L. Jeannerot

The deposition of silicon dioxide by Atmospheric Pressure Chemical Vapor Deposition using TEOS/Ozone...

Properties of Silicon Dioxide Film Deposited By PECVD at Low Temperature/Pressure

Meysam Zarchi
Shahrokh Ahangarani
Maryam Zare Sanjari

July 2014

conventional plasma enhanced chemical vapor deposition (PECVD) at low temperature/pressure with sila...

In-situ-Plasmavorbehandlung zur TEOS-Siliziumoxid-Abscheidung

Grassl, T.

January 1997

A process for controlled deposition of silicon oxide, as dielectric (40, 41) between raised circuit ...

Plasma Enhanced Chemical Vapor Deposition (PECVD) of Silicon Dioxide (SiO2) Using Oxford Instruments System 100 PECVD

Metzler, Meredith
Patel, Raj

February 2017

This report discusses the deposition process of SiO2 using the Oxford System 100 PECVD

Characterization of the SiO2 film deposited by using plasma enhanced chemical vapor deposition (PECVD) with TEOS/N2/O2

Meysam Zarchi
Maryam Zare Sanjari
Shahrokh Ahangarani

December 2013

The purpose of this study was to examine how certain parameters like temperature, pressure, and gas ...

Plasma-enhanced Chemical Vapor Deposition

Arjen Boogaard
Samenstelling Promotiecommissie
Voorzitter A. J
Deventer (www. Quixote. Nl
Figuren Binnenwerk Ihor Brunets
Arjen Boogaard
Arjen Boogaard

October 2016

Eindhoven Title: Plasma-enhanced chemical vapor deposition of silicon dioxide: optimiz-ing dielectri...

Influence of deposition parameters in PACVD-SiO<sub>2</sub> preparation on resulting film properties

Bandorf, R.
Stasewitsch, I.
Gerdes, H.
Bräuer, G.

January 2012

Silicon oxide thin films are used in several products serving from optical to electrical function. F...

Plasma Enhanced Chemical Vapor Deposition (PECVD) of Silicon Nitride (SiNx) Using Oxford Instruments System 100 PECVD

Metzler, Meredith
Patel, Raj

February 2017

This report discusses the deposition process of SiNx using the Oxford System 100 PECVD

Preliminary studies of atmospheric pressure plasma enhanced CVD (AP-PECVD) of thin oxide films

N. McSporran
M.L. Hitchman
S.E. Alexandrov
S.H. Shamlian
S. Turnbull
S. Turnbull

January 2002

Thin oxide films have a number of applications in diverse areas such as microelectronics, precision ...

Low temperature silicon dioxide film deposition by remote plasma enhanced chemical vapor deposition: growth mechanism

Park, YB
Rhee, SW

February 2019

Deposition mechanism of SiO2 film growth from SiH4-N2O by remote plasma enhanced chemical vapor depo...

Cyclic plasma deposition Of SiO2 films at low temperature (80 degrees C) with intermediate plasma treatment

Yi, C
Rhee, SW

Cyclic plasma enhanced chemical vapor deposition (CPECVD) with intermediate O-2 plasma treatment was...

Simulation Studies on PECVD SiO2 Process Aiming at TSV Application

Yang, Fangdong
Zhu, Fuyun
Yu, Min
Tian, Dayu
Zhang, Haixia
Jin, Yufeng

January 2011

A simulation for studying the process of plasma enhanced chemical vapor deposition (PECVD) technolog...

Plasma enhanced chemical vapor deposition of SiO_2 using novel alkoxysilane precursors

Bogart, K. H. A.
Dalleska, N. F.
Bogart, G. R.
Fisher, Ellen R.

March 1995

This communication describes our results using these novel alkoxysilane precursors for PECVD of SiO_...

Analysis of SiO2 Thin Films Deposited by PECVD Using an Oxygen-TEOS-Argon Mixture

Viana, Carlos E.
Silva, Ana N. R. da
Morimoto, Nilton I.
Bonnaud, Olivier

June 2001

This study analyses the influence of the argon flow on the Plasma Enhanced Chemical Vapor Deposition...

Plasma-assisted deposition of thin silicon oxide films in a remote PECVD reactor and characterization of films produced under different conditions

Hamelmann, Frank
Aschentrup, A
Brechling, Armin
Heinzmann, Ulrich
Gushterov, A
Szekeres, A
Simeonov, S

January 2004

Hamelmann F, Aschentrup A, Brechling A, et al. Plasma-assisted deposition of thin silicon oxide film...

Modeling of SiO2 deposition from mixtures of tetraethoxysilane and ozone in an APCVD industrial reactor

J.-P. Nieto
B. Caussat
J.-P. Couderc
S. Coletti
L. Jeannerot

The deposition of silicon dioxide by Atmospheric Pressure Chemical Vapor Deposition using TEOS/Ozone...

Properties of Silicon Dioxide Film Deposited By PECVD at Low Temperature/Pressure

Meysam Zarchi
Shahrokh Ahangarani
Maryam Zare Sanjari

July 2014

conventional plasma enhanced chemical vapor deposition (PECVD) at low temperature/pressure with sila...

In-situ-Plasmavorbehandlung zur TEOS-Siliziumoxid-Abscheidung

Grassl, T.

January 1997

A process for controlled deposition of silicon oxide, as dielectric (40, 41) between raised circuit ...

Plasma Enhanced Chemical Vapor Deposition (PECVD) of Silicon Dioxide (SiO2) Using Oxford Instruments System 100 PECVD

Metzler, Meredith
Patel, Raj

February 2017

This report discusses the deposition process of SiO2 using the Oxford System 100 PECVD

Characterization of the SiO2 film deposited by using plasma enhanced chemical vapor deposition (PECVD) with TEOS/N2/O2

Meysam Zarchi
Maryam Zare Sanjari
Shahrokh Ahangarani

December 2013

The purpose of this study was to examine how certain parameters like temperature, pressure, and gas ...

Plasma-enhanced Chemical Vapor Deposition

Arjen Boogaard
Samenstelling Promotiecommissie
Voorzitter A. J
Deventer (www. Quixote. Nl
Figuren Binnenwerk Ihor Brunets
Arjen Boogaard
Arjen Boogaard

October 2016

Eindhoven Title: Plasma-enhanced chemical vapor deposition of silicon dioxide: optimiz-ing dielectri...

Influence of deposition parameters in PACVD-SiO<sub>2</sub> preparation on resulting film properties

Bandorf, R.
Stasewitsch, I.
Gerdes, H.
Bräuer, G.

January 2012

Silicon oxide thin films are used in several products serving from optical to electrical function. F...

Plasma Enhanced Chemical Vapor Deposition (PECVD) of Silicon Nitride (SiNx) Using Oxford Instruments System 100 PECVD

Metzler, Meredith
Patel, Raj

February 2017

This report discusses the deposition process of SiNx using the Oxford System 100 PECVD

Preliminary studies of atmospheric pressure plasma enhanced CVD (AP-PECVD) of thin oxide films

N. McSporran
M.L. Hitchman
S.E. Alexandrov
S.H. Shamlian
S. Turnbull
S. Turnbull

January 2002

Thin oxide films have a number of applications in diverse areas such as microelectronics, precision ...

Low temperature silicon dioxide film deposition by remote plasma enhanced chemical vapor deposition: growth mechanism

Park, YB
Rhee, SW

February 2019

Deposition mechanism of SiO2 film growth from SiH4-N2O by remote plasma enhanced chemical vapor depo...

Cyclic plasma deposition Of SiO2 films at low temperature (80 degrees C) with intermediate plasma treatment

Yi, C
Rhee, SW

Cyclic plasma enhanced chemical vapor deposition (CPECVD) with intermediate O-2 plasma treatment was...

Simulation Studies on PECVD SiO2 Process Aiming at TSV Application

Yang, Fangdong
Zhu, Fuyun
Yu, Min
Tian, Dayu
Zhang, Haixia
Jin, Yufeng

January 2011

A simulation for studying the process of plasma enhanced chemical vapor deposition (PECVD) technolog...

Plasma enhanced chemical vapor deposition of SiO_2 using novel alkoxysilane precursors

Bogart, K. H. A.
Dalleska, N. F.
Bogart, G. R.
Fisher, Ellen R.

March 1995

This communication describes our results using these novel alkoxysilane precursors for PECVD of SiO_...

Analysis of SiO2 Thin Films Deposited by PECVD Using an Oxygen-TEOS-Argon Mixture

Viana, Carlos E.
Silva, Ana N. R. da
Morimoto, Nilton I.
Bonnaud, Olivier

June 2001

This study analyses the influence of the argon flow on the Plasma Enhanced Chemical Vapor Deposition...

Plasma-assisted deposition of thin silicon oxide films in a remote PECVD reactor and characterization of films produced under different conditions

Hamelmann, Frank
Aschentrup, A
Brechling, Armin
Heinzmann, Ulrich
Gushterov, A
Szekeres, A
Simeonov, S

January 2004

Hamelmann F, Aschentrup A, Brechling A, et al. Plasma-assisted deposition of thin silicon oxide film...

Modeling of SiO2 deposition from mixtures of tetraethoxysilane and ozone in an APCVD industrial reactor

J.-P. Nieto
B. Caussat
J.-P. Couderc
S. Coletti
L. Jeannerot

The deposition of silicon dioxide by Atmospheric Pressure Chemical Vapor Deposition using TEOS/Ozone...

Properties of Silicon Dioxide Film Deposited By PECVD at Low Temperature/Pressure

Meysam Zarchi
Shahrokh Ahangarani
Maryam Zare Sanjari

July 2014

conventional plasma enhanced chemical vapor deposition (PECVD) at low temperature/pressure with sila...

In-situ-Plasmavorbehandlung zur TEOS-Siliziumoxid-Abscheidung

Grassl, T.

January 1997

A process for controlled deposition of silicon oxide, as dielectric (40, 41) between raised circuit ...

Plasma Enhanced Chemical Vapor Deposition (PECVD) of Silicon Dioxide (SiO2) Using Oxford Instruments System 100 PECVD

Abstract

Extracted data

Plasma Enhanced Chemical Vapor Deposition (PECVD) of Silicon Dioxide (SiO2) Using Oxford Instruments System 100 PECVD

Abstract

Extracted data

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