Add to ORKGThis report discusses the CHF3/O2 etch process of SiNx using the Oxford 80 Plus RIE
The feasibility of patterning a cured polymeric film of benzocyclobutene (BCB) using silicon nitrid...
A process for producing etched micromechanical structures is provided, using Reactive Ion Etching (R...
A process for producing etched micromechanical structures is provided, using Reactive Ion Etching (R...
This report discusses the CHF3/O2 etch process of SiNx using the Oxford 80 Plus RIE
In this paper, general aspects of the reactive ion etching (RIE) technique will be described, such a...
The characteristics of the dry etching of SiNx:H thin films for display devices using SF6/O2 and NF3...
In advanced microelectronic device fabrications, novel gate electrode designs for field effect trans...
Abstract: Recently, silicon etching have received much attention for display industry, nano imprint ...
Stencil masks are used to print ultra-high resolution patterns using helium ion/atom beam lithograph...
AbstractStructuring of thin film silicon nitride (SiN) is often done by etching the thin film using ...
A study was performed on the etch characteristics of silicon dioxide and polysilicon for a reactive ...
Results of a comparative study of SiN(x) SiO(2) and Si etching in high- and low-density O(2)-N(2) ba...
A simulation of reactive ion etching (RIE) was carried out using Victory Process of Silvaco to study...
A simulation of reactive ion etching (RIE) was carried out using Victory Process of Silvaco to study...
Highly selective tching of Si3N4 over SiO2 has been investigated employing F and C1 atoms generated ...
The feasibility of patterning a cured polymeric film of benzocyclobutene (BCB) using silicon nitrid...
A process for producing etched micromechanical structures is provided, using Reactive Ion Etching (R...
A process for producing etched micromechanical structures is provided, using Reactive Ion Etching (R...
This report discusses the CHF3/O2 etch process of SiNx using the Oxford 80 Plus RIE
In this paper, general aspects of the reactive ion etching (RIE) technique will be described, such a...
The characteristics of the dry etching of SiNx:H thin films for display devices using SF6/O2 and NF3...
In advanced microelectronic device fabrications, novel gate electrode designs for field effect trans...
Abstract: Recently, silicon etching have received much attention for display industry, nano imprint ...
Stencil masks are used to print ultra-high resolution patterns using helium ion/atom beam lithograph...
AbstractStructuring of thin film silicon nitride (SiN) is often done by etching the thin film using ...
A study was performed on the etch characteristics of silicon dioxide and polysilicon for a reactive ...
Results of a comparative study of SiN(x) SiO(2) and Si etching in high- and low-density O(2)-N(2) ba...
A simulation of reactive ion etching (RIE) was carried out using Victory Process of Silvaco to study...
A simulation of reactive ion etching (RIE) was carried out using Victory Process of Silvaco to study...
Highly selective tching of Si3N4 over SiO2 has been investigated employing F and C1 atoms generated ...
The feasibility of patterning a cured polymeric film of benzocyclobutene (BCB) using silicon nitrid...
A process for producing etched micromechanical structures is provided, using Reactive Ion Etching (R...
A process for producing etched micromechanical structures is provided, using Reactive Ion Etching (R...