We present numerical data and scaling theories for the critical behavior of random resistor networks near the percolation threshold. We determine the critical exponents of a suitably defined resistance correlation function by a Padé analysis of low-concentration expansions as a function of dimensionality. We verify that d=6 is the critical dimensionality for the onset of mean-field behavior. We use the coherent-potential approximation to construct a mean-field scaling function for the critical region
We present a reanalysis of the renormalization-group calculation to first order in ε=6−d, where d is...
Abstract. We investigate the percolation properties of a random network of non-directed bonds (resis...
We consider a two-dimensional random resistor network (RRN) in the presence of two competing biased ...
We present numerical data and scaling theories for the critical behavior of random resistor networks...
We use low-density series expansions to calculate critical exponents for the behavior of random resi...
We use low-density series expansions to calculate critical exponents for the behavior of random resi...
We consider the critical properties of the two-point resistance and its fluctuations due to microsco...
We present a reanalysis of the renormalization-group calculation to first order in ε=6−d, where d is...
We consider the critical properties of the two-point resistance and its fluctuations due to microsco...
The state of a two-dimensional random resistor network, resulting from the simultaneous evolutions o...
In a random resistor network we consider the simultaneous evolution of two competing random processe...
Abstract. We introduce a transfer-matrix formulation to compute the conductance of random resistor n...
The resistance R(x,x’) between two connected terminals in a randomly diluted resistor network is stu...
The randomly diluted resistor network and XY model at low temperature T are studied near the d-dimen...
International audienceIntroduces a transfer-matrix formulation to compute the conductance of random ...
We present a reanalysis of the renormalization-group calculation to first order in ε=6−d, where d is...
Abstract. We investigate the percolation properties of a random network of non-directed bonds (resis...
We consider a two-dimensional random resistor network (RRN) in the presence of two competing biased ...
We present numerical data and scaling theories for the critical behavior of random resistor networks...
We use low-density series expansions to calculate critical exponents for the behavior of random resi...
We use low-density series expansions to calculate critical exponents for the behavior of random resi...
We consider the critical properties of the two-point resistance and its fluctuations due to microsco...
We present a reanalysis of the renormalization-group calculation to first order in ε=6−d, where d is...
We consider the critical properties of the two-point resistance and its fluctuations due to microsco...
The state of a two-dimensional random resistor network, resulting from the simultaneous evolutions o...
In a random resistor network we consider the simultaneous evolution of two competing random processe...
Abstract. We introduce a transfer-matrix formulation to compute the conductance of random resistor n...
The resistance R(x,x’) between two connected terminals in a randomly diluted resistor network is stu...
The randomly diluted resistor network and XY model at low temperature T are studied near the d-dimen...
International audienceIntroduces a transfer-matrix formulation to compute the conductance of random ...
We present a reanalysis of the renormalization-group calculation to first order in ε=6−d, where d is...
Abstract. We investigate the percolation properties of a random network of non-directed bonds (resis...
We consider a two-dimensional random resistor network (RRN) in the presence of two competing biased ...