Plan-view and cross-sectional transmission electron microscopy images show the microstructural properties of GaN thin films grown on graphene layers, including dislocation types and density, crystalline orientation and grain boundaries. The roles of ZnO nanowalls and GaN intermediate layers in the heteroepitaxial growth of GaN on graphene, revealed by cross-sectional transmission electron microscopy, are also discussed
We fabricated transferable gallium nitride (GaN) thin films and light-emitting diodes (LEDs) using g...
The monolithic integration of wurtzite GaN on Si via metal amp; 8722;organic vapor phase epitaxy is ...
The monolithic integration of wurtzite GaN on Si via metal amp; 8722;organic vapor phase epitaxy is ...
Microstructural defects in GaN thin films grown on graphene produced via chemical vapor deposition h...
The full performance of GaN devices for high power applications is not exploited due to their self-h...
The full performance of GaN devices for high power applications is not exploited due to their self-h...
The microstructure feature of the multilayered Gallium Nitride (GaN) films grown by using metalorgan...
Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si s...
For this work a structural study of the GaN/Al2O3 heteroepitaxy was carried out by Atomic Force Micr...
Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si s...
Microstructures of GaN films grown by low pressure metalorganic vapor-phase epitaxy on (0 1 (1) over...
Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si s...
In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by us...
The implementation of graphene layers in gallium nitride (GaN) heterostructure growth can solve self...
The implementation of graphene layers in gallium nitride (GaN) heterostructure growth can solve self...
We fabricated transferable gallium nitride (GaN) thin films and light-emitting diodes (LEDs) using g...
The monolithic integration of wurtzite GaN on Si via metal amp; 8722;organic vapor phase epitaxy is ...
The monolithic integration of wurtzite GaN on Si via metal amp; 8722;organic vapor phase epitaxy is ...
Microstructural defects in GaN thin films grown on graphene produced via chemical vapor deposition h...
The full performance of GaN devices for high power applications is not exploited due to their self-h...
The full performance of GaN devices for high power applications is not exploited due to their self-h...
The microstructure feature of the multilayered Gallium Nitride (GaN) films grown by using metalorgan...
Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si s...
For this work a structural study of the GaN/Al2O3 heteroepitaxy was carried out by Atomic Force Micr...
Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si s...
Microstructures of GaN films grown by low pressure metalorganic vapor-phase epitaxy on (0 1 (1) over...
Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si s...
In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by us...
The implementation of graphene layers in gallium nitride (GaN) heterostructure growth can solve self...
The implementation of graphene layers in gallium nitride (GaN) heterostructure growth can solve self...
We fabricated transferable gallium nitride (GaN) thin films and light-emitting diodes (LEDs) using g...
The monolithic integration of wurtzite GaN on Si via metal amp; 8722;organic vapor phase epitaxy is ...
The monolithic integration of wurtzite GaN on Si via metal amp; 8722;organic vapor phase epitaxy is ...