Permissions were not obtained for sharing the full text of this article. Full text is available from the American Physical Society and from arXiv. See links in this record.We report on the first experimental determination of the coherence length of excitons in semiconductors using the combination of spatially resolved photoluminescence with phonon sideband spectroscopy. The coherence length of excitons in ZnSe quantum wells is determined to be 300–400 nm, about 25–30 times the exciton de Broglie wavelength. With increasing exciton kinetic energy, the coherence length decreases slowly. The discrepancy between the coherence lengths measured and calculated by considering only the acoustic-phonon scattering suggests an important influence of ...
The excitonic coherence in semiconductor quantum wells is measured by time-resolved speckle analysis...
Despite the short timescales on which electron dynamics occur in semiconductor nanostructures, much ...
Transition metal dichalcogenides (TMDs) have garnered considerable interest in recent years owing to...
Permissions were not obtained for sharing the full text of this article. Full text is available fro...
Permissions were not obtained for sharing the full text of this article. Full text is available fro...
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A new method to measure the coherence of inhomogeneously broadened optical excitations in semiconduc...
Permissions were not obtained for sharing the full text of this article. Full text is available fro...
Atomically thin transition metal dichalcogenides are direct-gap semiconductors with strong light-mat...
We review studies on the coherent and incoherent exciton dynamics in ZnSe-based quantum wells. First...
Microscopic quantum phenomena such as interference or phase coherence between different quantum stat...
Resonant optical excitation of a direct bandgap semiconductor below the band edge induces excitonic ...
Indirect excitons in GaAS/AlGaAs coupled quantum wells have small mass, long lifetime and short cool...
The interplay between disorder and Coulomb interactions ubiquitously affects the properties of conde...
Different aspects of the photoluminescence from semiconductor quantum-confined structures are studie...
The excitonic coherence in semiconductor quantum wells is measured by time-resolved speckle analysis...
Despite the short timescales on which electron dynamics occur in semiconductor nanostructures, much ...
Transition metal dichalcogenides (TMDs) have garnered considerable interest in recent years owing to...
Permissions were not obtained for sharing the full text of this article. Full text is available fro...
Permissions were not obtained for sharing the full text of this article. Full text is available fro...
Permissions were not obtained for sharing the full text of this article. Full text available from t...
A new method to measure the coherence of inhomogeneously broadened optical excitations in semiconduc...
Permissions were not obtained for sharing the full text of this article. Full text is available fro...
Atomically thin transition metal dichalcogenides are direct-gap semiconductors with strong light-mat...
We review studies on the coherent and incoherent exciton dynamics in ZnSe-based quantum wells. First...
Microscopic quantum phenomena such as interference or phase coherence between different quantum stat...
Resonant optical excitation of a direct bandgap semiconductor below the band edge induces excitonic ...
Indirect excitons in GaAS/AlGaAs coupled quantum wells have small mass, long lifetime and short cool...
The interplay between disorder and Coulomb interactions ubiquitously affects the properties of conde...
Different aspects of the photoluminescence from semiconductor quantum-confined structures are studie...
The excitonic coherence in semiconductor quantum wells is measured by time-resolved speckle analysis...
Despite the short timescales on which electron dynamics occur in semiconductor nanostructures, much ...
Transition metal dichalcogenides (TMDs) have garnered considerable interest in recent years owing to...