High quality graphene nanoribbons epitaxially grown on the sidewalls of silicon carbide (SiC) mesa structures stand as key building blocks for graphene-based nanoelectronics. Such ribbons display 1D single-channel ballistic transport at room temperature with exceptionally long mean free paths. Here, using spatially-resolved two-point probe (2PP) measurements, we selectively access and directly image a range of individual transport modes in sidewall ribbons. The signature of the independently contacted channels is a sequence of quantised conductance plateaus for different probe positions. These result from an interplay between edge magnetism and asymmetric terminations at opposite ribbon edges due to the underlying SiC structure morphology. ...
We realize nanometer size constrictions in ballistic graphene nanoribbons grown on sidewalls of SiC ...
This work aims to contribute to the progress and understanding of the sources of disorder in nano-st...
This work aims to contribute to the progress and understanding of the sources of disorder in nano-st...
High quality graphene nanoribbons epitaxially grown on the sidewalls of silicon carbide (SiC) mesa s...
High quality graphene nanoribbons epitaxially grown on the sidewalls of silicon carbide (SiC) mesa s...
Altres ajuts: CERCA Programme/Generalitat de CatalunyaHigh quality graphene nanoribbons epitaxially ...
Altres ajuts: CERCA Programme/Generalitat de CatalunyaHigh quality graphene nanoribbons epitaxially ...
International audienceThe discovery of ballistic transport in graphene grown on SiC(0001) sidewall t...
International audienceThe discovery of ballistic transport in graphene grown on SiC(0001) sidewall t...
Nature (in print)Graphene electronics has motivated much of graphene science for the past decade. A ...
Graphene nanoribbons grown on sidewall facets of SiC have demonstrated exceptional quantized ballist...
Graphene nanoribbons (GNRs) are considered as major building blocks in future carbon-based electroni...
Graphene nanoribbons (GNRs) are considered as major building blocks in future carbon-based electroni...
Équipe 102 : Surfaces et SpectroscopiesInternational audienceGraphene nanoribbons grown on sidewall ...
Graphene nanoribbons (GNRs) grown epitaxially on silicon carbide (SiC) substrates could serve as key...
We realize nanometer size constrictions in ballistic graphene nanoribbons grown on sidewalls of SiC ...
This work aims to contribute to the progress and understanding of the sources of disorder in nano-st...
This work aims to contribute to the progress and understanding of the sources of disorder in nano-st...
High quality graphene nanoribbons epitaxially grown on the sidewalls of silicon carbide (SiC) mesa s...
High quality graphene nanoribbons epitaxially grown on the sidewalls of silicon carbide (SiC) mesa s...
Altres ajuts: CERCA Programme/Generalitat de CatalunyaHigh quality graphene nanoribbons epitaxially ...
Altres ajuts: CERCA Programme/Generalitat de CatalunyaHigh quality graphene nanoribbons epitaxially ...
International audienceThe discovery of ballistic transport in graphene grown on SiC(0001) sidewall t...
International audienceThe discovery of ballistic transport in graphene grown on SiC(0001) sidewall t...
Nature (in print)Graphene electronics has motivated much of graphene science for the past decade. A ...
Graphene nanoribbons grown on sidewall facets of SiC have demonstrated exceptional quantized ballist...
Graphene nanoribbons (GNRs) are considered as major building blocks in future carbon-based electroni...
Graphene nanoribbons (GNRs) are considered as major building blocks in future carbon-based electroni...
Équipe 102 : Surfaces et SpectroscopiesInternational audienceGraphene nanoribbons grown on sidewall ...
Graphene nanoribbons (GNRs) grown epitaxially on silicon carbide (SiC) substrates could serve as key...
We realize nanometer size constrictions in ballistic graphene nanoribbons grown on sidewalls of SiC ...
This work aims to contribute to the progress and understanding of the sources of disorder in nano-st...
This work aims to contribute to the progress and understanding of the sources of disorder in nano-st...