Optimization of a PECVD borophosphosilicate glass process.

This project prepared for Unitrode Integrated Circuits Corporation discusses the characterization and optimization of a plasma enhanced chemical vapor deposited (PECVD) borophosphosilicate glass (BPSG) dielectric film. Through the use of UV ellipsometry, stress analysis, FTIR and Raman spectroscopy, and surface charge analysis, the film and its underlayer were thoroughly characterized to explain unwanted field threshold voltage drops presumably caused by excess charge. Also, characterization of B(OH)3 a BPSG thin film defect was completed resulting in the suggestion of a reaction for the formation of B(OH)3