Add to ORKGThis project primarily focused on the characterization of Philips Semiconductors\u27 BLF4G20LS-110 Laterally diffused metal on silicon (LDMOS) RF power transistor. After manual testing for performance parameters such as efficiency, linearity and gain, matching impedance points were verified with an automated set-up called load pull. The board design was compared with ADS simulations and the board layout was completed using AutoCAD. The end result of the project was a demonstration circuit which exceeded the current specifications for this power transistor
The primary purpose of this thesis was to present a theoretical large-signal analysis to study the p...
This report represents the work of two WPI undergraduate students submitted to the faculty as eviden...
Abstract—This paper describes a power amplifier, employing parallel-connected laterally diffused met...
In mobile communication new applications like wireless internet and mobile video have increased the ...
Power amplifier is a part of RF front-end transmitter block. Usually, it is located at the end of ...
The emergence of new communication standards has put a key challenge for semiconductor industry to d...
Designing, optimizing and producing modern power amplifiers (PA) requires new and fast RF (radio fre...
Designing, optimizing and producing modern power amplifiers (PA) requires new and fast RF (radio fre...
The emergence of new communication standards has put a key challenge for semiconductor industry to d...
Abstract — The coupling between charge transport, heat and energy flow required to model high frequ...
This work focuses on different kinds of Switch Mode Power Amplifiers (SMPAs) using LDMOS technologie...
This work focuses on different kinds of Switch Mode Power Amplifiers (SMPAs) using LDMOS technologie...
In this review we present a measurement-based approach to the creation of a successful circuit model...
The merging of the fields of RF engineering and signal processing has introduced concepts such as b...
A comparison between the RF performance of vertical and lateral power MOSFETs is presented. The role...
The primary purpose of this thesis was to present a theoretical large-signal analysis to study the p...
This report represents the work of two WPI undergraduate students submitted to the faculty as eviden...
Abstract—This paper describes a power amplifier, employing parallel-connected laterally diffused met...
In mobile communication new applications like wireless internet and mobile video have increased the ...
Power amplifier is a part of RF front-end transmitter block. Usually, it is located at the end of ...
The emergence of new communication standards has put a key challenge for semiconductor industry to d...
Designing, optimizing and producing modern power amplifiers (PA) requires new and fast RF (radio fre...
Designing, optimizing and producing modern power amplifiers (PA) requires new and fast RF (radio fre...
The emergence of new communication standards has put a key challenge for semiconductor industry to d...
Abstract — The coupling between charge transport, heat and energy flow required to model high frequ...
This work focuses on different kinds of Switch Mode Power Amplifiers (SMPAs) using LDMOS technologie...
This work focuses on different kinds of Switch Mode Power Amplifiers (SMPAs) using LDMOS technologie...
In this review we present a measurement-based approach to the creation of a successful circuit model...
The merging of the fields of RF engineering and signal processing has introduced concepts such as b...
A comparison between the RF performance of vertical and lateral power MOSFETs is presented. The role...
The primary purpose of this thesis was to present a theoretical large-signal analysis to study the p...
This report represents the work of two WPI undergraduate students submitted to the faculty as eviden...
Abstract—This paper describes a power amplifier, employing parallel-connected laterally diffused met...