The behavior of n-δ-doped wide quantum well (QW) heterostructures in the presence of intense far-infrared (FIR) radiation is studied using the semiconductor Bloch equations, in the time-dependent Hartree version and without the rotating-wave approximation. A QW is designed where one can either obtain a strong subharmonic (period doubling) or a strong incommensurate (Hopf) frequency response by varying the sheet density and field strength. These strong responses should be attainable with current technology, and the field amplitudes and frequencies of the drive are well within the range of FIR free-electron lasers. © 2003 The American Physical Society.Fil: Batista, Adriano A.. Georgia Institute of Techology; Estados UnidosFil: Welin, Bjorn. U...
We are developing a novel GaAs/AlGaAs multi-quantum-well (MQW) far infrared detector based on inters...
The infrared region is the cradle of many vital applications in spectroscopy, medicine and communica...
Electron intersubband lifetimes of 1.8 ps and 2.5 ps were measured in GaAs/AlGaAs asymmetric stepped...
Far infrared (FIR) frequencies, have potential applications in spectroscopy, radio astronomy, and sp...
Far infrared (FIR) frequencies, have potential applications in spectroscopy, radio astronomy, and sp...
We model the dynamics of electrons in doped quantum wells driven by terahertz radiation and a superl...
We model the dynamics of electrons in doped quantum wells driven by terahertz radiation and a superl...
In this PhD thesis, we study analytically and numerically linear and nonlinear optical phenomena in ...
In this PhD thesis, we study analytically and numerically linear and nonlinear optical phenomena in ...
In this PhD thesis, we study analytically and numerically linear and nonlinear optical phenomena in ...
This dissertation is a theoretical treatment of the electric field dependence of optical properties ...
The mechanism of the huge optical rectification (OR) in asymmetrical quantum wells (AQW) has been in...
Optically pumped lasers based on GaAs/AlGaAs multiple quantum well (MQW) structures are a potential ...
Far-infrared (FIR) lasers working in the submillimeter range have wide uses in radio astronomy, comm...
The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications,...
We are developing a novel GaAs/AlGaAs multi-quantum-well (MQW) far infrared detector based on inters...
The infrared region is the cradle of many vital applications in spectroscopy, medicine and communica...
Electron intersubband lifetimes of 1.8 ps and 2.5 ps were measured in GaAs/AlGaAs asymmetric stepped...
Far infrared (FIR) frequencies, have potential applications in spectroscopy, radio astronomy, and sp...
Far infrared (FIR) frequencies, have potential applications in spectroscopy, radio astronomy, and sp...
We model the dynamics of electrons in doped quantum wells driven by terahertz radiation and a superl...
We model the dynamics of electrons in doped quantum wells driven by terahertz radiation and a superl...
In this PhD thesis, we study analytically and numerically linear and nonlinear optical phenomena in ...
In this PhD thesis, we study analytically and numerically linear and nonlinear optical phenomena in ...
In this PhD thesis, we study analytically and numerically linear and nonlinear optical phenomena in ...
This dissertation is a theoretical treatment of the electric field dependence of optical properties ...
The mechanism of the huge optical rectification (OR) in asymmetrical quantum wells (AQW) has been in...
Optically pumped lasers based on GaAs/AlGaAs multiple quantum well (MQW) structures are a potential ...
Far-infrared (FIR) lasers working in the submillimeter range have wide uses in radio astronomy, comm...
The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications,...
We are developing a novel GaAs/AlGaAs multi-quantum-well (MQW) far infrared detector based on inters...
The infrared region is the cradle of many vital applications in spectroscopy, medicine and communica...
Electron intersubband lifetimes of 1.8 ps and 2.5 ps were measured in GaAs/AlGaAs asymmetric stepped...