Fatigue-free Bi3.25La0.75Ti3O12 (BLT) thin films were grown on LaNiO3,RuO2, and La0.5Sr0.5CoO3 bottom electrodes in a microwave furnace at 700 degreesC for 10 min. The remanent polarization (P-r) and the drive voltage (V-c) were in the range of 11-23 muC/cm(2) and 0.86-1.56 V, respectively, and are better than the values found in the literature. The BLT capacitors did not show any significant fatigue up to 10(10) read/write switching cycles. (C) 2004 American Institute of Physics
[[abstract]]Highly (117)- and (001)-oriented Bi3.25La0.75Ti3O12 (BLT) thin films were fabricated on ...
Lanthanum doped bismuth titanate (Bi3.25La0.75Ti3O12 abbreviated as BLT) has been known as one of ty...
The (1 1 7) and (0 0 1 0)-oriented Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates ...
Ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films were deposited on Pt/Ti/SiO2/Si substrates by the ...
Fatigue-free and highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown on Pt/Ti/SiO2...
c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown on a RuO2 top electrode deposited on ...
The ferroelectric properties and leakage current mechanisms of preferred oriented Bi3.25La0.75Ti3O12...
Lanthanum doped bismuth titanate thin films (Bi3.25La0.75Ti3O12-BLT) were produced by the polymeric ...
Fatigue-free and highly c-axis oriented Bi3.2La0.8Ti3O12 (BLT) thin films were deposited on p-type S...
Thin films of bismuth titanate, Bi4Ti3O12, prepared by the metalorganic solution deposition techniqu...
Fatigue-free and highly c-axis oriented Bi3.15Sm0.85Ti3O12 (BSmT) thin films were grown on Pt/TiO2/S...
The nature of defects in polycrystalline Bi4-xLaxTi3O12 (BLT) thin films with x=0.00, 0.25, 0.50, an...
Bismuth-layer-structured ferroelectric (BLSF) thin films with a composition of Bi3.25La0.75Ti3O12 we...
Highly c-axis-oriented Bi3.25La0.75Ti3O12 (BLT) films with a homogeneous in-plane orientation were s...
Vanadium-modified bismuth titanate Bi3.99Ti2.97V 0.03O12 (BTV) thin films of about 400 nm thickness ...
[[abstract]]Highly (117)- and (001)-oriented Bi3.25La0.75Ti3O12 (BLT) thin films were fabricated on ...
Lanthanum doped bismuth titanate (Bi3.25La0.75Ti3O12 abbreviated as BLT) has been known as one of ty...
The (1 1 7) and (0 0 1 0)-oriented Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates ...
Ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films were deposited on Pt/Ti/SiO2/Si substrates by the ...
Fatigue-free and highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown on Pt/Ti/SiO2...
c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown on a RuO2 top electrode deposited on ...
The ferroelectric properties and leakage current mechanisms of preferred oriented Bi3.25La0.75Ti3O12...
Lanthanum doped bismuth titanate thin films (Bi3.25La0.75Ti3O12-BLT) were produced by the polymeric ...
Fatigue-free and highly c-axis oriented Bi3.2La0.8Ti3O12 (BLT) thin films were deposited on p-type S...
Thin films of bismuth titanate, Bi4Ti3O12, prepared by the metalorganic solution deposition techniqu...
Fatigue-free and highly c-axis oriented Bi3.15Sm0.85Ti3O12 (BSmT) thin films were grown on Pt/TiO2/S...
The nature of defects in polycrystalline Bi4-xLaxTi3O12 (BLT) thin films with x=0.00, 0.25, 0.50, an...
Bismuth-layer-structured ferroelectric (BLSF) thin films with a composition of Bi3.25La0.75Ti3O12 we...
Highly c-axis-oriented Bi3.25La0.75Ti3O12 (BLT) films with a homogeneous in-plane orientation were s...
Vanadium-modified bismuth titanate Bi3.99Ti2.97V 0.03O12 (BTV) thin films of about 400 nm thickness ...
[[abstract]]Highly (117)- and (001)-oriented Bi3.25La0.75Ti3O12 (BLT) thin films were fabricated on ...
Lanthanum doped bismuth titanate (Bi3.25La0.75Ti3O12 abbreviated as BLT) has been known as one of ty...
The (1 1 7) and (0 0 1 0)-oriented Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates ...