The effect of oxide stress on the total ionizing dose (TID) radiation sensitivity of silicon carbide (SiC) power MOSFETS and TID sensitivity of gallium nitride (GaN) power transistor is reported. Difference in TID response for stressed and unstressed devices was observed
This paper discusses the total ionizing effects on Silicon Power MOSFET and Silicon Carbide Power MO...
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power el...
Silicon carbide (SiC) devices are promising as radiation tolerant electronics, since trap generation...
The effect of oxide stress on the total ionizing dose (TID) radiation sensitivity of silicon carbide...
Power electronic components operating in radiation environments are exposed to different types of ra...
GaN and SiC power devices were extensively tested under different types of radiation, in the framewo...
As an emerging technology, silicon carbide (SiC) power MOSFETs are showing great potential for highe...
GaN and SiC power devices were extensively tested under different types of radiation, in the framewo...
GaN and SiC power devices were extensively tested under different types of radiation, in the framewo...
The use of temperature sensitive electrical parameters for condition monitoring of power devices is ...
Power electronic devices in spacecraft and military applications requires high radiation tolerant. T...
Gamma-ray irradiation into vertical type n-channel hexagonal(4H)-silicon carbide (SiC) metal-oxide-s...
Heavy-ion induced degradation and catastrophic failure data for SiC power MOSFETs and Schottky diode...
The irradiation and annealing responses of 4H-SiC MOS devices with nitrided oxides are investigated ...
Advances in space and nuclear technologies are limited by the capabilities of the conventional silic...
This paper discusses the total ionizing effects on Silicon Power MOSFET and Silicon Carbide Power MO...
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power el...
Silicon carbide (SiC) devices are promising as radiation tolerant electronics, since trap generation...
The effect of oxide stress on the total ionizing dose (TID) radiation sensitivity of silicon carbide...
Power electronic components operating in radiation environments are exposed to different types of ra...
GaN and SiC power devices were extensively tested under different types of radiation, in the framewo...
As an emerging technology, silicon carbide (SiC) power MOSFETs are showing great potential for highe...
GaN and SiC power devices were extensively tested under different types of radiation, in the framewo...
GaN and SiC power devices were extensively tested under different types of radiation, in the framewo...
The use of temperature sensitive electrical parameters for condition monitoring of power devices is ...
Power electronic devices in spacecraft and military applications requires high radiation tolerant. T...
Gamma-ray irradiation into vertical type n-channel hexagonal(4H)-silicon carbide (SiC) metal-oxide-s...
Heavy-ion induced degradation and catastrophic failure data for SiC power MOSFETs and Schottky diode...
The irradiation and annealing responses of 4H-SiC MOS devices with nitrided oxides are investigated ...
Advances in space and nuclear technologies are limited by the capabilities of the conventional silic...
This paper discusses the total ionizing effects on Silicon Power MOSFET and Silicon Carbide Power MO...
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power el...
Silicon carbide (SiC) devices are promising as radiation tolerant electronics, since trap generation...
DOI
Add to ORKG