A circularly polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate the Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in the Faraday geometry. Structures with different thicknesses of the QW barriers have been studied in the magnetic field parallel and tilted with respect to the sample normal. The effective electron-hole g-factor has been found by measurement of splitting of polarized magneto-PL lines. Lande factors of electrons have been calculated using the 14-band k.p method, and the g-factor of holes was determined by subtracting the calculated contribution of the electrons from the effective electron-hole g-factor. Anisotropy of the hole g-factor has been studied applying the tilted magneti...
In-plane hole g factors measured in quantum point contacts based on p-type heterostructures strongly...
The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effecti...
We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/A...
A circularly polarized magneto-photoluminescence (magneto-PL) technique has been applied to investig...
Photoluminescence (PL) and highly circularly polarized magneto-PL (up to 50% at 6 T) from two-step b...
We report on a magneto-photoluminescence (PL) study of Zeeman effect in Mn modulation-doped InAs/InG...
The magnitude and sign of the effective magnetic splitting factor g* for conduction electrons in GaA...
We perform polarization-resolved magneto-optical measurements on single InAsP quantum dots embedded ...
We report on the study of the linear and circular magnetogyrotropic photogalvanic effect (MPGE) in G...
Measurements of excitonic Zeeman splitting have been made in a range of InGaAs/GaAs and GaInP/AlGaIn...
The Zeeman splitting and the underlying value of the g-factor for conduction band electrons in GaAs/...
We report measurements of the electron g-factor in InSb quantum wells using the coincidence techniqu...
The ability to preferentially spin-polarise a photoexcited carrier population in a quantum well by o...
The electron, hole, and exciton g factors and diamagnetic coefficients have been calculated using en...
In-plane hole g factors measured in quantum point contacts based on p-type heterostructures strongly...
The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effecti...
We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/A...
A circularly polarized magneto-photoluminescence (magneto-PL) technique has been applied to investig...
Photoluminescence (PL) and highly circularly polarized magneto-PL (up to 50% at 6 T) from two-step b...
We report on a magneto-photoluminescence (PL) study of Zeeman effect in Mn modulation-doped InAs/InG...
The magnitude and sign of the effective magnetic splitting factor g* for conduction electrons in GaA...
We perform polarization-resolved magneto-optical measurements on single InAsP quantum dots embedded ...
We report on the study of the linear and circular magnetogyrotropic photogalvanic effect (MPGE) in G...
Measurements of excitonic Zeeman splitting have been made in a range of InGaAs/GaAs and GaInP/AlGaIn...
The Zeeman splitting and the underlying value of the g-factor for conduction band electrons in GaAs/...
We report measurements of the electron g-factor in InSb quantum wells using the coincidence techniqu...
The ability to preferentially spin-polarise a photoexcited carrier population in a quantum well by o...
The electron, hole, and exciton g factors and diamagnetic coefficients have been calculated using en...
In-plane hole g factors measured in quantum point contacts based on p-type heterostructures strongly...
The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effecti...
We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/A...