In this work, we investigate and explain the timedependent behavior of shot noise in Silicon quantum dot-based double-tunnel junctions by means of a three-dimensional selfconsistent simulation and a Monte-Carlo algorithm following the time evolution of the system. We demonstrate the strong link between autocorrelation functions and electron waiting time distributions, i.e, the time between two consecutive tunnel events through a given junction. Moreover, we separate and analyze the contribution of each different path - evolution of the number of electrons in the quantum dot between two consecutive tunnel events through the same junction - to understand clearly the behavior of auto-correlations and waiting time distributions in t...
Tunneling of spinless electrons from a single-channel emitter into an empty collector through an int...
We investigate the transient electron transport through the quantum dot and double quantum dot syste...
spécial issuCharge transfer in a tunnel junction is studied under dc and ac voltage bias using quant...
The simulation of a double-tunnel junction with the SENS simulator gives access to the frequency-de...
Waiting times between subsequent tunneling events in the double quantum dot system are shown to be c...
We analyze charge fluctuations in a parasitic state strongly coupled to a superconducting Josephson-...
In recent years, it has been routinely achieved to build nanoscale electronic devices, which generat...
Real-time detection of single electron tunneling through a T-shaped double quantum dot is simulated,...
We describe the conditional and unconditional dynamics of two coupled quantum dots when one dot is s...
In recent years, it has been routinely achieved to build nanoscale electronic devices, which generat...
In the resonant tunneling regime, sequential processes dominate single-electron transport through qu...
Due to the Fermi-Dirac statistics of electrons the temporal correlations of tunneling events in a do...
We present the conditional quantum dynamics of an electron tunneling between two quantum dots subjec...
We simulate the dynamics of a single-electron source, modeled as a quantum dot with on-site Coulomb ...
We study the dynamics of a pulse-gated semiconductor double-quantum-dot qubit. In our experiments, t...
Tunneling of spinless electrons from a single-channel emitter into an empty collector through an int...
We investigate the transient electron transport through the quantum dot and double quantum dot syste...
spécial issuCharge transfer in a tunnel junction is studied under dc and ac voltage bias using quant...
The simulation of a double-tunnel junction with the SENS simulator gives access to the frequency-de...
Waiting times between subsequent tunneling events in the double quantum dot system are shown to be c...
We analyze charge fluctuations in a parasitic state strongly coupled to a superconducting Josephson-...
In recent years, it has been routinely achieved to build nanoscale electronic devices, which generat...
Real-time detection of single electron tunneling through a T-shaped double quantum dot is simulated,...
We describe the conditional and unconditional dynamics of two coupled quantum dots when one dot is s...
In recent years, it has been routinely achieved to build nanoscale electronic devices, which generat...
In the resonant tunneling regime, sequential processes dominate single-electron transport through qu...
Due to the Fermi-Dirac statistics of electrons the temporal correlations of tunneling events in a do...
We present the conditional quantum dynamics of an electron tunneling between two quantum dots subjec...
We simulate the dynamics of a single-electron source, modeled as a quantum dot with on-site Coulomb ...
We study the dynamics of a pulse-gated semiconductor double-quantum-dot qubit. In our experiments, t...
Tunneling of spinless electrons from a single-channel emitter into an empty collector through an int...
We investigate the transient electron transport through the quantum dot and double quantum dot syste...
spécial issuCharge transfer in a tunnel junction is studied under dc and ac voltage bias using quant...