[EN]We investigate damped nonharmonic oscillations at terahertz frequencies observed in the current response of Schottky diodes simulated with the Monte Carlo method under applied signals of a few hundred GHz. From Monte Carlo simulations of different diode structures, two kinds of nonharmonic oscillations have been identified. The first kind of oscillations is due to the coupling of the nonlinear performance of the Schottky junction with the inertial motion of the carriers in the non-depleted region of the epilayer. The second kind of oscillations is due to the modulation of the n+–n junction when high electric fields are induced in the non-depleted region of the epilayer. These oscillations constitute a promising mechanism for THz signal ...
The objective of this thesis is to theoretically investigate the operation of GaAs and InP transit-t...
Near-ideal GaAs Schottky barrier diodes especially designed for mixing applications in the THz frequ...
Metal oxide semiconductor (MOS) capacitance within field effect transistors are of great interest in...
This work presents an analysis of the electrical and the noise performances of a 2.5 THz mixer. Rel...
This paper presents a simulation tool for the analysis and design of Schottky mixers which is able ...
The Monte Carlo method is applied in this paper to characterize the noise spectra of GaAs and GaN Sc...
International audienceTo qualify the feasibility of standard semiconductor materials and Schottky-ba...
Substantial progress has b2een made recently in the advancement of solid state terahertz sources usi...
A theoretical model for the noise properties of Schottky barrier diodes in the framework of the ther...
Abstract- Substantial progress has been made recently in the advancement of solid state terahertz so...
Abstract — Substantial progress has been made recently in the advancement of solid state terahertz s...
To qualify the feasibility of standard semiconductor materials and Schottky‐barrier diodes (SBDs) fo...
By means of an ensemble Monte Carlo simulator, the appeareance of THz oscillations in InAlAs/InGaAs ...
This thesis deals with the modelling of THz planar Schottky diodes, focusing on analyses of the geom...
In this paper, indications of charge trapping in THz Schottky diodes are investigated with various m...
The objective of this thesis is to theoretically investigate the operation of GaAs and InP transit-t...
Near-ideal GaAs Schottky barrier diodes especially designed for mixing applications in the THz frequ...
Metal oxide semiconductor (MOS) capacitance within field effect transistors are of great interest in...
This work presents an analysis of the electrical and the noise performances of a 2.5 THz mixer. Rel...
This paper presents a simulation tool for the analysis and design of Schottky mixers which is able ...
The Monte Carlo method is applied in this paper to characterize the noise spectra of GaAs and GaN Sc...
International audienceTo qualify the feasibility of standard semiconductor materials and Schottky-ba...
Substantial progress has b2een made recently in the advancement of solid state terahertz sources usi...
A theoretical model for the noise properties of Schottky barrier diodes in the framework of the ther...
Abstract- Substantial progress has been made recently in the advancement of solid state terahertz so...
Abstract — Substantial progress has been made recently in the advancement of solid state terahertz s...
To qualify the feasibility of standard semiconductor materials and Schottky‐barrier diodes (SBDs) fo...
By means of an ensemble Monte Carlo simulator, the appeareance of THz oscillations in InAlAs/InGaAs ...
This thesis deals with the modelling of THz planar Schottky diodes, focusing on analyses of the geom...
In this paper, indications of charge trapping in THz Schottky diodes are investigated with various m...
The objective of this thesis is to theoretically investigate the operation of GaAs and InP transit-t...
Near-ideal GaAs Schottky barrier diodes especially designed for mixing applications in the THz frequ...
Metal oxide semiconductor (MOS) capacitance within field effect transistors are of great interest in...