STRUCTURE AND INTERFACE OF THIN POLYSILICON FILMS

THE STRUCTURAL CHARACTERISTICS OF THE FOLLOWING GROUPS OF POLYSILICON FILMS WERE STUDIED: 1) FILMS GROWN BY CHEMICAL VAPOUR DEPOSITION 2) FILMS GROWN BY THERMAL CRYSTALLISATION OF AMORPHOUS SILICON 3) FILMS GROWN BY LASER CRYSTALLISATION OF AMORPHOUS SILICON. (1) TEMPERATURE OF 630 C DEGREES 1A) HIGH PRESSURE RANGE (P>100 MTORR): CRYSTALLITES WITH TUFTY APPEARANCE, SMALL WIDTH AND ANGLEWITH THE VERTICAL TO THE SURFACE. HIGH IN - GRAIN DEFECT DENSITY, MAINLY {111} MICROTWINS. 1B) INTERMEDIATE PRESSURE RANGE (10 - 100 MTORR), LARGER CRYSTALLITE DIAMETER, IMPROVEMENT OF THE IN - GRAIN STRUCTURE. 1C) LOW PRESSURE RANGE (P100 MTORR): ΚΡΥΣΤΑΛΛΟΙ ΘΥΣΣΑΝΩΤΟΙ, ΜΙΚΡΟ ΕΥΡΟΣ ΚΑΙ ΓΩΝΙΑ ΜΕ ΤΗΝ ΚΑΘΕΤΟ ΣΤΗΝ ΕΠΙΦΑΝΕΙΑ. ΥΨΗΛΗ ΠΥΚΝΟΤΗΤΑ ΕΠΙΠΕΔΩΝ ΑΤΕΛΕΙΩΝ, ΚΥΡΙΑ {111} ΔΙΔΥΜΙΩΝ. (1Β) ΠΕΡΙΟΧΗ ΕΝΔΙΑΜΕΣΩΝ ΠΙΕΣΕΩΝ (10 - 100 MTORR), ΑΥΞΗΣΗ ΔΙΑΜΕΤΡΟΥ ΚΡΥΣΤΑΛΛΙΤΩΝ, ΜΕΙΩΣΗ ΠΥΚΝΟΤΗΤΑΣ ΑΤΕΛΕΙΩΝ. (1Γ) ΠΕΡΙΟΧΗ ΧΑΜΗΛΩΝ ΠΙΕΣΕΩΝ (