Although high-resistivity, low-loss silicon is an excellent material for terahertz transmission optics, its high refractive index necessitates an antireflection treatment. We fabricated a wide-bandwidth, two-layer antireflection treatment by cutting subwavelength structures into the silicon surface using multi-depth deep reactive-ion etching (DRIE). A wafer with this treatment on both sides has <−20 dB (<1%) reflectance over 187–317 GHz at a 15° angle of incidence in TE polarization. We also demonstrated that bonding wafers introduce no reflection features above the −20 dB level (also in TE at 15°), reproducing previous work. Together these developments immediately enable construction of wide-bandwidth silicon vacuum windows and represent...
Low-loss lenses are required for submillimeter astronomical applications, such as instrumentation fo...
We present a new flexible technology to generate broadband antireflection structures for the THz fre...
The optimal structural parameters for an antireflective structure in high resistive float zone silic...
Silicon optics with wide bandwidth anti-reflection (AR) coatings, made of multi-layer textured silic...
Many applications in astronomy from tens of GHz to THz frequencies, on the ground and in space, woul...
Many applications in astronomy from tens of GHz to THz frequencies, on the ground and in space, woul...
Future instruments employing cryogenic detectors for millimeter and submillimeter astronomy applicat...
Silicon optics with broadband antireflective (AR) treatments are being developed for millimeter and ...
Silicon optics with broadband antireflective (AR) treatments are being developed for millimeter and ...
The increasing scale of cryogenic detector arrays for submillimeter and millimeter wavelength astrop...
We present the design, simulation, and planned fabrication process of a flat high resistivity silico...
We present the design, simulation, and planned fabrication process of a flat high resistivity silico...
We present the design, simulation, and planned fabrication process of a flat high resistivity silico...
We report on the design, fabrication, and characterization of low-loss antireflection (AR) structure...
We present the design, fabrication, and test of a 100 mm diameter flat gradient-index (GRIN) lens fa...
Low-loss lenses are required for submillimeter astronomical applications, such as instrumentation fo...
We present a new flexible technology to generate broadband antireflection structures for the THz fre...
The optimal structural parameters for an antireflective structure in high resistive float zone silic...
Silicon optics with wide bandwidth anti-reflection (AR) coatings, made of multi-layer textured silic...
Many applications in astronomy from tens of GHz to THz frequencies, on the ground and in space, woul...
Many applications in astronomy from tens of GHz to THz frequencies, on the ground and in space, woul...
Future instruments employing cryogenic detectors for millimeter and submillimeter astronomy applicat...
Silicon optics with broadband antireflective (AR) treatments are being developed for millimeter and ...
Silicon optics with broadband antireflective (AR) treatments are being developed for millimeter and ...
The increasing scale of cryogenic detector arrays for submillimeter and millimeter wavelength astrop...
We present the design, simulation, and planned fabrication process of a flat high resistivity silico...
We present the design, simulation, and planned fabrication process of a flat high resistivity silico...
We present the design, simulation, and planned fabrication process of a flat high resistivity silico...
We report on the design, fabrication, and characterization of low-loss antireflection (AR) structure...
We present the design, fabrication, and test of a 100 mm diameter flat gradient-index (GRIN) lens fa...
Low-loss lenses are required for submillimeter astronomical applications, such as instrumentation fo...
We present a new flexible technology to generate broadband antireflection structures for the THz fre...
The optimal structural parameters for an antireflective structure in high resistive float zone silic...