The ruthenium phosphite hydride complexes H2Ru(P(OR)(3))(4) (R = Me (1), Et (2), Pr-i (3)) were used as CVD precursors for the deposition of films of amorphous ruthenium-phosphorus alloys. The as-deposited films were X-ray amorphous and XPS analysis revealed that they were predominantly comprised of Ru and P in zero oxidation states. XPS analysis also showed the presence of small amounts of oxidized ruthenium and phosphorus. The composition of the films was found to depend on ligand chemistry as well as the deposition conditions. The use of H-2 as the carrier gas had the effect of increasing the relative concentrations of P and O for all films. Annealing films to 700 degrees C under vacuum produced films of polycrystalline hcp Ru while a fl...
[[abstract]]Treatment of (dimethylaminomethyl)ruthenocene with cis-Pt(DMSO)(2)Cl-2 led to the format...
The metalorganic precursor cyclopentadienylethyl(dicarbonyl)ruthenium (CpRu(CO)2Et) was used to deve...
Treatment of (dimethylaminomethyl)ruthenocene with cis-Pt(DMSO)2Cl2 led to the formation of a ruthen...
The ruthenium phosphite hydride complexes H2Ru(P(OR)(3))(4) (R = Me (1), Et (2), Pr-i (3)) were used...
Copper interconnect requires liner materials that function as a diffusion barrier, a seed layer for ...
A series of ruthenium complexes of the general type Ru(CO)2(P(n-Bu)3)2(O2CR)2 (4a, R = Me; 4b, R = E...
Copper interconnect systems in modern microelectronics require the use of one or more liner layers a...
textFuture copper interconnect systems will require replacement of the materials that currently comp...
textThe chemical vapor deposition growth of amorphous metallic alloys is currently of interest for p...
We report approaches to grow ultrathin Ru films for application as a seed layer and Cu diffusion bar...
textAs device dimensions in integrated circuits scale down, there is an increasing need to deposit u...
[[abstract]]Reaction of Ru-3(CO)(12) with 6 eq. of beta-diketone ligands (hfac) H, (tmhd) H, (acac) ...
The deposition of ruthenium thin films is investigated using a newly synthesized precursor (cyclope...
The synthesis and solid‐state structure of Ru(CO)2(PEt3)2(O2CR)2 (4a–f, R = Me, Et, iPr, tBu, CH2OMe...
[[abstract]]The deposition of pure ruthenium thin films is reported from carbonyl β-diketonate precu...
[[abstract]]Treatment of (dimethylaminomethyl)ruthenocene with cis-Pt(DMSO)(2)Cl-2 led to the format...
The metalorganic precursor cyclopentadienylethyl(dicarbonyl)ruthenium (CpRu(CO)2Et) was used to deve...
Treatment of (dimethylaminomethyl)ruthenocene with cis-Pt(DMSO)2Cl2 led to the formation of a ruthen...
The ruthenium phosphite hydride complexes H2Ru(P(OR)(3))(4) (R = Me (1), Et (2), Pr-i (3)) were used...
Copper interconnect requires liner materials that function as a diffusion barrier, a seed layer for ...
A series of ruthenium complexes of the general type Ru(CO)2(P(n-Bu)3)2(O2CR)2 (4a, R = Me; 4b, R = E...
Copper interconnect systems in modern microelectronics require the use of one or more liner layers a...
textFuture copper interconnect systems will require replacement of the materials that currently comp...
textThe chemical vapor deposition growth of amorphous metallic alloys is currently of interest for p...
We report approaches to grow ultrathin Ru films for application as a seed layer and Cu diffusion bar...
textAs device dimensions in integrated circuits scale down, there is an increasing need to deposit u...
[[abstract]]Reaction of Ru-3(CO)(12) with 6 eq. of beta-diketone ligands (hfac) H, (tmhd) H, (acac) ...
The deposition of ruthenium thin films is investigated using a newly synthesized precursor (cyclope...
The synthesis and solid‐state structure of Ru(CO)2(PEt3)2(O2CR)2 (4a–f, R = Me, Et, iPr, tBu, CH2OMe...
[[abstract]]The deposition of pure ruthenium thin films is reported from carbonyl β-diketonate precu...
[[abstract]]Treatment of (dimethylaminomethyl)ruthenocene with cis-Pt(DMSO)(2)Cl-2 led to the format...
The metalorganic precursor cyclopentadienylethyl(dicarbonyl)ruthenium (CpRu(CO)2Et) was used to deve...
Treatment of (dimethylaminomethyl)ruthenocene with cis-Pt(DMSO)2Cl2 led to the formation of a ruthen...