One of the many advantages of Selective Area Laser Deposition (SALD) and Selective Area Laser Deposition Vapor Infiltration (SALDVI) is that they can be used to embed in-situ micro-sensors within macro-components. A single-point SiC/C thermocouple sensor embedded within a SiC macro-component and electrically insulated with silicon nitride layers has been demonstrated. In many applications, multi-point sensors within a single component are needed, e.g., in monitoring the temperature gradient and distribution at different positions. In this paper, multi-point thermocouple devices are demonstrated. The macro-component is a SiC bulk shape made by infiltrating vapor deposited silicon carbide into a silicon carbide powder bed using the SA...
The method of Selective Area Laser Deposition (SALD) and Vapor Infiltration (SALDVI) has been succe...
Solid free form of ceramic materials can be achieved by deposition from the gas phase. The Selectiv...
Device fabrication and characterization studies relevant to the development of silicon carbide (SiC)...
One of the many advantages of Selective Area Laser Deposition (SALD) and Selective Area Laser Depos...
The goals of this dissertation were to demonstrate the feasibility of fabricating in-situ sensors us...
With the intrinsic nature to process relatively small features, selective area laser deposition (SA...
Selective Area Laser Deposition Vapor Infiltration (SALDVI) is the SFF technique using gas phase pr...
Selected Area Laser Deposition Vapor Infiltration (SALDVI) is a unique combination ofselected area ...
Selective Area Laser Deposition Vapor Infiltration (SALDVI) is a developing solid freeform fabricat...
Selective Area Laser Deposition Vapor Infiltration (SALDVI) is an experimental solid freeform fabric...
Selective Area Laser Deposition Vapor Infiltration (SALDVI) ofsilicon carbide powder infiltrated wi...
Gas phase solid freeform fabrication research at The University of Connecticut focuses on two main ...
The laser-driven, gas-phase based SFF technique for joining together ceramic components with cerami...
Selective Area Laser Deposition (SALD) is a Solid Freeform Fabrication (SFF) technique which uses a...
Proposed are novel sensors for extreme environment power plants, laser beam analysis and biomedicine...
The method of Selective Area Laser Deposition (SALD) and Vapor Infiltration (SALDVI) has been succe...
Solid free form of ceramic materials can be achieved by deposition from the gas phase. The Selectiv...
Device fabrication and characterization studies relevant to the development of silicon carbide (SiC)...
One of the many advantages of Selective Area Laser Deposition (SALD) and Selective Area Laser Depos...
The goals of this dissertation were to demonstrate the feasibility of fabricating in-situ sensors us...
With the intrinsic nature to process relatively small features, selective area laser deposition (SA...
Selective Area Laser Deposition Vapor Infiltration (SALDVI) is the SFF technique using gas phase pr...
Selected Area Laser Deposition Vapor Infiltration (SALDVI) is a unique combination ofselected area ...
Selective Area Laser Deposition Vapor Infiltration (SALDVI) is a developing solid freeform fabricat...
Selective Area Laser Deposition Vapor Infiltration (SALDVI) is an experimental solid freeform fabric...
Selective Area Laser Deposition Vapor Infiltration (SALDVI) ofsilicon carbide powder infiltrated wi...
Gas phase solid freeform fabrication research at The University of Connecticut focuses on two main ...
The laser-driven, gas-phase based SFF technique for joining together ceramic components with cerami...
Selective Area Laser Deposition (SALD) is a Solid Freeform Fabrication (SFF) technique which uses a...
Proposed are novel sensors for extreme environment power plants, laser beam analysis and biomedicine...
The method of Selective Area Laser Deposition (SALD) and Vapor Infiltration (SALDVI) has been succe...
Solid free form of ceramic materials can be achieved by deposition from the gas phase. The Selectiv...
Device fabrication and characterization studies relevant to the development of silicon carbide (SiC)...