Reducing the material sizes to the nanometer length scale leads to drastic modifications of the propagating lattice excitations (phonons) and their interactions with electrons and magnons. In EuO, a promising material for spintronic applications in which a giant spin-phonon interaction is present, this might imply a reduction of the degree of spin polarization in thin films. Therefore, a comprehensive investigation of the lattice dynamics and spin-phonon interaction in EuO films is necessary for practical applications. We report a systematic lattice dynamics study of ultrathin EuO(001) films using nuclear inelastic scattering on the Mössbauer-active isotope ^{151}Eu and first-principles theory. The films were epitaxially grown on YAlO_{3}(1...
High quality thin films of the ferromagnetic semiconductor EuO have been prepared and were studied u...
peer reviewedHyperfine interactions in europium orthophosphate EuPO4 were investigated using 151Eu M...
Magnetic heterostructures may exhibit new features at the interface while leaving the bulk propertie...
ABSTRACT: Reducing the material sizes to the nanometer length scale leads to drastic modifications o...
Comprehensive studies of lattice dynamics in the ferromagnetic semiconductor EuO have been performed...
The spatial confinement of atoms at surfaces and interfaces significantly alters the lattice dynamic...
Using the density functional theory, we study the structural and lattice dynamical properties of eur...
9th Joint European Magnetic Symposia (JEMS) -- SEP 03-07, 2018 -- Mainz, GERMANYSahin, Hasan/0000-00...
In the thesis at hand, we explore fundamental properties of ultrathin europium oxide (EuO) films. Eu...
Compressively strained epitaxial (001) EuTiO 3 thin films of tetragonal symmetry have been deposited...
Compressively strained epitaxial (001) EuTiO3 thin films of tetragonal symmetry have been deposited ...
High-quality films of the ferromagnetic semiconductor EuO are grown on epitaxial graphene on Ir(111)...
We demonstrate the high-quality heteroepitaxy of ultrathin EuO films with bulklike ferromagnetism di...
Phonon-related effects are strongly evident in electron spectroscopies related to band structure. Th...
Using molecular-beam epitaxy, we demonstrate the adsorption-controlled growth of epitaxial EuO films...
High quality thin films of the ferromagnetic semiconductor EuO have been prepared and were studied u...
peer reviewedHyperfine interactions in europium orthophosphate EuPO4 were investigated using 151Eu M...
Magnetic heterostructures may exhibit new features at the interface while leaving the bulk propertie...
ABSTRACT: Reducing the material sizes to the nanometer length scale leads to drastic modifications o...
Comprehensive studies of lattice dynamics in the ferromagnetic semiconductor EuO have been performed...
The spatial confinement of atoms at surfaces and interfaces significantly alters the lattice dynamic...
Using the density functional theory, we study the structural and lattice dynamical properties of eur...
9th Joint European Magnetic Symposia (JEMS) -- SEP 03-07, 2018 -- Mainz, GERMANYSahin, Hasan/0000-00...
In the thesis at hand, we explore fundamental properties of ultrathin europium oxide (EuO) films. Eu...
Compressively strained epitaxial (001) EuTiO 3 thin films of tetragonal symmetry have been deposited...
Compressively strained epitaxial (001) EuTiO3 thin films of tetragonal symmetry have been deposited ...
High-quality films of the ferromagnetic semiconductor EuO are grown on epitaxial graphene on Ir(111)...
We demonstrate the high-quality heteroepitaxy of ultrathin EuO films with bulklike ferromagnetism di...
Phonon-related effects are strongly evident in electron spectroscopies related to band structure. Th...
Using molecular-beam epitaxy, we demonstrate the adsorption-controlled growth of epitaxial EuO films...
High quality thin films of the ferromagnetic semiconductor EuO have been prepared and were studied u...
peer reviewedHyperfine interactions in europium orthophosphate EuPO4 were investigated using 151Eu M...
Magnetic heterostructures may exhibit new features at the interface while leaving the bulk propertie...