We report a continuous wave 1 μm laser based on InAs Stranski-Krastanov quantum dots (SK-QD) which is optically pumped on a wetting layer absorption band at 915 nm. The slope efficiency of this laser relative to absorbed pump power was measured to be 56% with wetting layer pumping, 1.75 times larger than when pumped with 830 nm light absorbed into the barriers between the SK-QD layers. Compared to barrier pumping, wetting layer pumping benefits from a smaller quantum defect, with less heat deposited in the active region, at the expense of weaker pump absorption in the thin (~1 nm) wetting layer. When a 50 μm thick intracavity diamond heatspreader was contacted to the optically pumped gain structure, a 10-fold increase in output power, up to...
Reported is the first InAs/InP (100) quantum-dot (QD) laser operating in continuous-wave mode at roo...
We report the first room temperature quantum dot (QD) vertical-external-cavity surface-emitting lase...
Continuous-wave (CW) lasing operation with a very low threshold current density (J/sub th/=32.5 A/cm...
We report a continuous wave 1 μm laser based on InAs Stranski-Krastanov quantum dots (SK-QD) which i...
Quantum-dot vertical-external-cavity surface-emitting lasers (QD VECSELs) are of interest due to the...
We demonstrate multiwatt cw output power from an optically pumped quantum-dot semiconductor disk las...
Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (...
An important advantage of the quantum dot (QD) laser diode is its ability to reach lasing threshold ...
Continuous wave optically pumped semiconductor disk lasers based on Stranski-Krastanow grown quantum...
Due to their δ-like density of states, quantum dots (QDs) were expected to improve laser device perf...
We demonstrate greatly improved threshold current and modal gain performance of 1.3-μm quantum-dot (...
A membrane external-cavity surface-emitting laser (MECSEL) with an InAs/InP quantum dot (QD) based g...
A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 m...
Optically pumped semiconductor disk lasers with antiresonant design based on Stranski-Krastanow-grow...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
Reported is the first InAs/InP (100) quantum-dot (QD) laser operating in continuous-wave mode at roo...
We report the first room temperature quantum dot (QD) vertical-external-cavity surface-emitting lase...
Continuous-wave (CW) lasing operation with a very low threshold current density (J/sub th/=32.5 A/cm...
We report a continuous wave 1 μm laser based on InAs Stranski-Krastanov quantum dots (SK-QD) which i...
Quantum-dot vertical-external-cavity surface-emitting lasers (QD VECSELs) are of interest due to the...
We demonstrate multiwatt cw output power from an optically pumped quantum-dot semiconductor disk las...
Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (...
An important advantage of the quantum dot (QD) laser diode is its ability to reach lasing threshold ...
Continuous wave optically pumped semiconductor disk lasers based on Stranski-Krastanow grown quantum...
Due to their δ-like density of states, quantum dots (QDs) were expected to improve laser device perf...
We demonstrate greatly improved threshold current and modal gain performance of 1.3-μm quantum-dot (...
A membrane external-cavity surface-emitting laser (MECSEL) with an InAs/InP quantum dot (QD) based g...
A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 m...
Optically pumped semiconductor disk lasers with antiresonant design based on Stranski-Krastanow-grow...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
Reported is the first InAs/InP (100) quantum-dot (QD) laser operating in continuous-wave mode at roo...
We report the first room temperature quantum dot (QD) vertical-external-cavity surface-emitting lase...
Continuous-wave (CW) lasing operation with a very low threshold current density (J/sub th/=32.5 A/cm...