We present a design for a piezoelectric-driven uniaxial stress cell suitable for use at ambient and cryogenic temperatures and that incorporates both a displacement and a force sensor. The cell has a diameter of 46 mm and a height of 13 mm. It can apply a zero-load displacement of up to similar to 45 mu m and a zero-displacement force of up to similar to 245 N. With combined knowledge of the displacement and force applied to the sample, it can quickly be determined whether the sample and its mounts remain within their elastic limits. In tests on the oxide metal Sr2RuO4, we found that at room temperature serious plastic deformation of the sample onset at a uniaxial stress of similar to 0.2 GPa, while at 5 K the sample deformation remained el...
AbstractA new concept for a piezoresistive force sensor for high pressure applications is presented....
A set of semiconductor force and pressure sensors developed on the basis of heteroepitaxial layers o...
This research involved the development of a practical simulation program for silicon piezoresistive ...
We present a piezoelectric-driven uniaxial pressure cell that is optimized for muon spin relaxation ...
We report the development of a technique to measure heat capacity at large uniaxial pressure using a...
We report the design and construction of piezoelectric-based apparatus for applying continuously tun...
Piezoelectric actuators are actually used in Fast Active Cold Tuning Systems (FACTS) for SRF cavitie...
A silicon load cell (force sensor) is presented which is based on a new operating principle. The for...
To reach high gradients in pulsed operation of superconducting (SC) cavities an active Lorentz force...
Response to uniaxial stress has become a major probe of electronic materials. Tunable uniaxial stres...
Abstract Maximum operating temperature is usually one of the limiting factors for using of conventio...
Thin, piezoresistive silicon cantilevers are shown to provide unprecedented sensitivity for force de...
In this paper, a low-cost load cell (force sensor) is presented in which the force to be measured is...
Piezoelectric actuators outperform other technological solutions in the area of high-speed, high-for...
A dedicated apparatus was designed and constructed for studying the electromechanical behavior of pr...
AbstractA new concept for a piezoresistive force sensor for high pressure applications is presented....
A set of semiconductor force and pressure sensors developed on the basis of heteroepitaxial layers o...
This research involved the development of a practical simulation program for silicon piezoresistive ...
We present a piezoelectric-driven uniaxial pressure cell that is optimized for muon spin relaxation ...
We report the development of a technique to measure heat capacity at large uniaxial pressure using a...
We report the design and construction of piezoelectric-based apparatus for applying continuously tun...
Piezoelectric actuators are actually used in Fast Active Cold Tuning Systems (FACTS) for SRF cavitie...
A silicon load cell (force sensor) is presented which is based on a new operating principle. The for...
To reach high gradients in pulsed operation of superconducting (SC) cavities an active Lorentz force...
Response to uniaxial stress has become a major probe of electronic materials. Tunable uniaxial stres...
Abstract Maximum operating temperature is usually one of the limiting factors for using of conventio...
Thin, piezoresistive silicon cantilevers are shown to provide unprecedented sensitivity for force de...
In this paper, a low-cost load cell (force sensor) is presented in which the force to be measured is...
Piezoelectric actuators outperform other technological solutions in the area of high-speed, high-for...
A dedicated apparatus was designed and constructed for studying the electromechanical behavior of pr...
AbstractA new concept for a piezoresistive force sensor for high pressure applications is presented....
A set of semiconductor force and pressure sensors developed on the basis of heteroepitaxial layers o...
This research involved the development of a practical simulation program for silicon piezoresistive ...