Low energy electron proximity printing using a self-assembled monolayer resist
- David, C.
- Müller, H.
- Völkel, B.
- Grunze, M.
DOIAbstract
A simple method for high resolution (<100nm) lithography is reported. We use electrons with energies ranging from 100–300eV emitted by tungsten field emission tips for proximity printing of stencil masks. A comparison with other parallel fine line techniques, like proximity printing and projection lithography with x-rays, high energy electrons or ions, reveals the specific advantages and restrictions of our method. The masks are made of ≈ 100nm thick silicon membranes structured by e-beam lithography and reactive ion etching (RIE). Free standing gratings with periods down to 100nm serve as test patterns for proximity printing with gaps of ≈15μm. due to the short penetration depth of the low energy electrons, ultrathin resist systems are nee...
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