Characterization and optimization of a thin direct electron detector for fast imaging applications

Direct electron detectors are increasingly used to explore the dynamics of macromolecules in real space and real time using transmission electron microscopy. The purpose of this work is to optimize the most suitable detector configuration of a thin silicon detector by Monte Carlo Simulations. Several simulations were performed to achieve an advanced detector geometry that reduces significantly the background signal due to backscattered electrons resulting in an enhanced imaging performance of the detector. Utilizing DEPFET (DEpleted P-channel Field Effect Transistor) technology and the novel ideas for the optimized detector geometry, a unique direct hit electron detector is currently being produced