To better understand the electronic and chemical properties of wide-gap oxide surfaces at the atomic scale, experimental work has focused on epitaxial films on metal substrates. Recent findings show that these films are considerably thinner than previously thought. This raises doubts about the transferability of the results to surface properties of thicker films and bulk crystals. By means of density-functional theory and approximate GW corrections for the electronic spectra we demonstrate for three characteristic widegap oxides (silica, alumina, and hafnia) the influence of the substrate and highlight critical differences between the ultrathin films and surfaces of bulk materials. Our results imply that monolayer-thin oxide films have rath...
Oxide ultra-thin film surfaces have properties and structures that are significantly different from ...
The investigation of oxide films with a thickness of a few nanometers or below grown on another subs...
A first-principles account of the observed limiting thickness of oxide films formed on aluminum duri...
To better understand the electronic and chemical properties of wide-gap oxide surfaces at the atomic...
Oxide thin films on metals are now currently used as model systems to study the surface properties o...
The alignment of band energies between conductive oxides and semiconductors is crucial for the furth...
A combination of density functional theory calculations and photoelectron spectroscopy provides new ...
Competition between electronic and atomic reconstruction is a constantly recurring theme in transiti...
AbstractThe alignment of band energies between conductive oxides and semiconductors is crucial for t...
Silica is one of the key materials in many modern technological applications. 'Surface science' appr...
The alignment of band energies between conductive oxides and semiconductors is crucial for the furth...
This paper critically reviews the experimental and theoretical studies on the growth of ultrathin si...
Ultrathin oxide films consist of a few monolayers of oxide material on a support and are generally n...
Metal oxides and oxide thin films are extensively used as active catalysts and catalytic supports, a...
Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silic...
Oxide ultra-thin film surfaces have properties and structures that are significantly different from ...
The investigation of oxide films with a thickness of a few nanometers or below grown on another subs...
A first-principles account of the observed limiting thickness of oxide films formed on aluminum duri...
To better understand the electronic and chemical properties of wide-gap oxide surfaces at the atomic...
Oxide thin films on metals are now currently used as model systems to study the surface properties o...
The alignment of band energies between conductive oxides and semiconductors is crucial for the furth...
A combination of density functional theory calculations and photoelectron spectroscopy provides new ...
Competition between electronic and atomic reconstruction is a constantly recurring theme in transiti...
AbstractThe alignment of band energies between conductive oxides and semiconductors is crucial for t...
Silica is one of the key materials in many modern technological applications. 'Surface science' appr...
The alignment of band energies between conductive oxides and semiconductors is crucial for the furth...
This paper critically reviews the experimental and theoretical studies on the growth of ultrathin si...
Ultrathin oxide films consist of a few monolayers of oxide material on a support and are generally n...
Metal oxides and oxide thin films are extensively used as active catalysts and catalytic supports, a...
Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silic...
Oxide ultra-thin film surfaces have properties and structures that are significantly different from ...
The investigation of oxide films with a thickness of a few nanometers or below grown on another subs...
A first-principles account of the observed limiting thickness of oxide films formed on aluminum duri...