A scheme for spin-selective electron localization in Mn₃Ga Heusler material

We demonstrate that tetragonal Mn 3 Ga Heusler material allows for a new possibility of adjusting an electric current by means of the so-called spin-selective localization of conduction electrons. On the basis of a first-principles analysis, we propose possible chemical substitutes for Mn, which, when used in small quantities, can lead to a disorder-induced localization of the conduction electrons in a single spin channel. Replacement of the Mn in Mn3 − x Y x Ga with other 3 d transition metals Y is known not to change the tetragonal structure for a certain range of x . For Y = Co the range is x ⩽ 0.5. Therefore, substitution of Co for Mn is used in the present work as a prototype procedure for a detailed demonstration of the underlying physical mechanisms