We have studied the electronic structure of hexagonal MnAs, as epitaxial continuous film on GaAs(001) and as nanocrystals embedded in GaAs, by Mn 2p core-level photoemission spectroscopy. Configuration-interaction analyses based on a cluster model show that the ground state of the embedded MnAs nanocrystals is dominated by a d5 configuration that maximizes the local Mn moment. Nanoscaling and strain significantly alter the properties of MnAs. Internal strain in the nanocrystals results in reduced p-d hybridization and enhanced ionic character of the Mn-As bonding interactions. The spatial confinement and reduced p-d hybridization in the nanocrystals lead to enhanced d-electron localization, triggering d-d electron correlations, and enhancin...
We report electronic and magnetic properties of pure and arsenic-doped manganese clusters from d...
X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to ...
Individual Mn impurities deposited on Ge(100), Ge(111), and GaAs(110) substrates present magnetic mo...
We have studied the electronic structure of hexagonal MnAs, as epitaxial continuous film on GaAs(001...
Ferromagnetic (FM) nanostructures embedded in semiconductors are of fundamental interest since their...
First principles total-energy pseudopotential calculations have been performed to investigate STM im...
MnAs nanoclusters in GaAs were investigated with cross-sectional scanning tunneling microscopy. The ...
Novel concepts such as racetrack memory devices or planar logic elements based on ferromagnetic mate...
We investigated the electronic properties of MnAs nano-clusters embedded in GaAs by bulk sensitive p...
MnAs nanoclusters in GaAs were investigated with cross-sectional scanning tunneling microscopy. The ...
MnAs nanoclusters in GaAs were investigated with cross-sectional scanning tunneling microscopy. The ...
MnAs nanoclusters in GaAs were investigated with cross-sectional scanning tunneling microscopy. The ...
X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to ...
We report electronic and magnetic properties of pure and arsenic-doped manganese clusters from d...
X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to ...
We report electronic and magnetic properties of pure and arsenic-doped manganese clusters from d...
X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to ...
Individual Mn impurities deposited on Ge(100), Ge(111), and GaAs(110) substrates present magnetic mo...
We have studied the electronic structure of hexagonal MnAs, as epitaxial continuous film on GaAs(001...
Ferromagnetic (FM) nanostructures embedded in semiconductors are of fundamental interest since their...
First principles total-energy pseudopotential calculations have been performed to investigate STM im...
MnAs nanoclusters in GaAs were investigated with cross-sectional scanning tunneling microscopy. The ...
Novel concepts such as racetrack memory devices or planar logic elements based on ferromagnetic mate...
We investigated the electronic properties of MnAs nano-clusters embedded in GaAs by bulk sensitive p...
MnAs nanoclusters in GaAs were investigated with cross-sectional scanning tunneling microscopy. The ...
MnAs nanoclusters in GaAs were investigated with cross-sectional scanning tunneling microscopy. The ...
MnAs nanoclusters in GaAs were investigated with cross-sectional scanning tunneling microscopy. The ...
X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to ...
We report electronic and magnetic properties of pure and arsenic-doped manganese clusters from d...
X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to ...
We report electronic and magnetic properties of pure and arsenic-doped manganese clusters from d...
X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to ...
Individual Mn impurities deposited on Ge(100), Ge(111), and GaAs(110) substrates present magnetic mo...