Subject of the present work is the diffusion of adsorbed particles on single crystal planes, which is investigated by scanning tunneling microscopy (STM) and analyzed quantitatively. By evaluation of the atomic motion of oxygen atoms on Ru(0001) it is demonstated, how the transition from the microscopic to the macroscopic description of diffusion can be realized experimentally. Computer-aided image processing permits the statistical evaluation of long sequences of several thousands of atomic configurations, which were recorded with a fast STM system that allows frame rates of up to 20 frames per second. On the one hand, this enables the measurement of the jump rate of isolated oxygen atoms at room temperature as well as the influence of the...
Many atomic diffusion processes occur at rates that are too fast to observe experimentally. Using vi...
Helium-3 surface spin echo spectroscopy (HeSE) has been used to measure the diffusive dynamics of ad...
The diffusion of Si dimers on the Si(001) surface at temperatures between room temperature and 128 °...
Subject of the present work is the diffusion of adsorbed particles on single crystal planes, which i...
The diffusive motion of O atoms adsorbed on Ru(0001) was observed on the atomic scale by scanning tu...
The diffusive motion of O atoms adsorbed on Ru(0001) was observed on the atomic scale by scanning tu...
For dynamic studies of surface processes a fast scanning tunneling microscope (STM) was developed, b...
Scanning tunneling microscopy (STM) imaging was applied to study coverages of less than 0.3 monolaye...
We introduce a new technique with high time resolution to measure surface diffusion by monitoring th...
The dynamic behavior of N atoms adsorbed on a Ru(0001) surface was studied by scanning tunneling mic...
An intermediate state in atomic diffusion processes in the O(2×2) layer on Ru(0001) is resolved with...
This thesis is a theoretical study of atomic diffusion processes in condensed matter, with particula...
This thesis is a theoretical study of atomic diffusion processes in condensed matter, with particula...
165 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1980.Several different topics, all...
The field ion microscope, with its ability to depict individual metal atoms on crystals, has made it...
Many atomic diffusion processes occur at rates that are too fast to observe experimentally. Using vi...
Helium-3 surface spin echo spectroscopy (HeSE) has been used to measure the diffusive dynamics of ad...
The diffusion of Si dimers on the Si(001) surface at temperatures between room temperature and 128 °...
Subject of the present work is the diffusion of adsorbed particles on single crystal planes, which i...
The diffusive motion of O atoms adsorbed on Ru(0001) was observed on the atomic scale by scanning tu...
The diffusive motion of O atoms adsorbed on Ru(0001) was observed on the atomic scale by scanning tu...
For dynamic studies of surface processes a fast scanning tunneling microscope (STM) was developed, b...
Scanning tunneling microscopy (STM) imaging was applied to study coverages of less than 0.3 monolaye...
We introduce a new technique with high time resolution to measure surface diffusion by monitoring th...
The dynamic behavior of N atoms adsorbed on a Ru(0001) surface was studied by scanning tunneling mic...
An intermediate state in atomic diffusion processes in the O(2×2) layer on Ru(0001) is resolved with...
This thesis is a theoretical study of atomic diffusion processes in condensed matter, with particula...
This thesis is a theoretical study of atomic diffusion processes in condensed matter, with particula...
165 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1980.Several different topics, all...
The field ion microscope, with its ability to depict individual metal atoms on crystals, has made it...
Many atomic diffusion processes occur at rates that are too fast to observe experimentally. Using vi...
Helium-3 surface spin echo spectroscopy (HeSE) has been used to measure the diffusive dynamics of ad...
The diffusion of Si dimers on the Si(001) surface at temperatures between room temperature and 128 °...