AbstractThe impact of laterally non-uniform carrier lifetime on the determination of the emitter saturation current(Joe) from photoconductance-based measurements, based on the self-consistent method proposed by Trupke and Bardos, is investigated using a model assuming two adjacent regions with considerably difference Joe. It is shown that the method can result in an underestimation of the mean Joe if the distribution of the Joe across the sensed area is not uniform. From simulation it is verified that t he error can be eliminated through independent measurement of the sample optical properties. The self-consistent calibration mechanism is also studied by the model. Experimental measurements confirm the model predictions
One major loss mechanism for currently relevant solar cells [e.g., passivated emitter and rear cells...
International audienceAbstract The steady-state photocarrier grating (SSPG) experiment is a popular ...
Measurement techniques which rely on the exact knowledge of the actual generation rate within a sili...
The impact of laterally non-uniform carrier lifetime on the determination of the emitter saturation ...
AbstractThe impact of laterally non-uniform carrier lifetime on the determination of the emitter sat...
Methods for the determination of the emitter saturation current density J0e in high and low injectio...
A method to derive the emitter saturation current density J0e with lateral resolution is applied to ...
AbstractSpatially resolved measurements of minority carrier lifetime are a valuable tool to monitor ...
Inductively coupled photoconductance measurements are widely used to characterize carrier recombina...
AbstractA method to derive the emitter saturation current density J0e with lateral resolution is app...
Measuring the excess charge carrier density is a widespread approach to accessing the charge carrier...
An improved simple equation to calculate the minority-carrier effective lifetime in photoconductance...
The measurement of the effective carrier lifetime in silicon has a high importance for the material ...
Calibration of CCD arrays is commonly conducted using dark frames. Non-absolute calibration techniqu...
Photoconductance (PC) measurements of the diffused-region recombination-current pre-factor J0d make ...
One major loss mechanism for currently relevant solar cells [e.g., passivated emitter and rear cells...
International audienceAbstract The steady-state photocarrier grating (SSPG) experiment is a popular ...
Measurement techniques which rely on the exact knowledge of the actual generation rate within a sili...
The impact of laterally non-uniform carrier lifetime on the determination of the emitter saturation ...
AbstractThe impact of laterally non-uniform carrier lifetime on the determination of the emitter sat...
Methods for the determination of the emitter saturation current density J0e in high and low injectio...
A method to derive the emitter saturation current density J0e with lateral resolution is applied to ...
AbstractSpatially resolved measurements of minority carrier lifetime are a valuable tool to monitor ...
Inductively coupled photoconductance measurements are widely used to characterize carrier recombina...
AbstractA method to derive the emitter saturation current density J0e with lateral resolution is app...
Measuring the excess charge carrier density is a widespread approach to accessing the charge carrier...
An improved simple equation to calculate the minority-carrier effective lifetime in photoconductance...
The measurement of the effective carrier lifetime in silicon has a high importance for the material ...
Calibration of CCD arrays is commonly conducted using dark frames. Non-absolute calibration techniqu...
Photoconductance (PC) measurements of the diffused-region recombination-current pre-factor J0d make ...
One major loss mechanism for currently relevant solar cells [e.g., passivated emitter and rear cells...
International audienceAbstract The steady-state photocarrier grating (SSPG) experiment is a popular ...
Measurement techniques which rely on the exact knowledge of the actual generation rate within a sili...