Light emission as an analysis tool for GaAs ICs

AbstractAs GaAs IC integration continues, device characterization and failure analysis get more difficult to perform. Standard visual and electrical inspections are becoming less adequate to evaluate devices and determine root cause of failures. A relatively new technique, used for several years on silicon devices, is light emission microscopy. The properties of light emission on silicon devices have been known for several decades. The light-producing properties of GaAs, a direct bandgap material, make it a natural for light emission study. This overview is intended to discuss the methodology and results of GaAs MESFET light emission