AbstractThe results of electrical characterisation and X-ray detection measurements of two different active area (0.06mm2 and 0.5mm2) commercial 4H-SiC Schottky photodiodes at room temperature are reported. The devices exhibited low dark currents (less than 10pA) even at a high electric field strengths (403kV/cm for 0.06mm2 diodes; 227kV/cm for 0.5mm2 diodes). The results of the X-ray measurements indicate that the diodes can be used as photon counting spectroscopic X-ray detectors with modest energy resolutions: FWHM at 5.9keV of 1.8keV and 3.3keV, for the 0.06mm2 and 0.5mm2 devices, respectively. Noise analysis of the photodiodes coupled to a custom low noise charge sensitive preamplifier is also presented
The quantum efficiencies of semiconductor photodiodes have been measured at photon energies from 5 t...
Ultraviolet radiation covers the wavelength from 400nm down to 10nm. The superior material propertie...
A variety of new types of detectors based on wide band gap materials have been developed for soft X-...
The results of electrical characterisation and X-ray detection measurements of two different active ...
AbstractThe results of electrical characterisation and X-ray detection measurements of two different...
AbstractFive SiC Schottky photodiodes for X-ray detection have been electrically characterized at ro...
Five SiC Schottky photodiodes for X-ray detection have been electrically characterized at room tempe...
4H-SiC Schottky photodiodes, with epitaxial layers, employing thin (20 nm) Ni2Si Schottky contacts,...
Mo/4H-SiC Schottky diodes were investigated as detectors for their suitability in photon counting X-...
Two commercial-off-the-shelf (COTS) 4H-SiC UV photodiodes have been investigated for their suitabili...
We describe a novel SiC Schottky diode architecture. The semi-transparent SiC Schottky diode has an ...
Novel photon counting Alo.8Gao.2As, GaAs and SiC X-ray photodiodes were investigated through experim...
Novel photon counting Al0.8Ga0.2As, GaAs and SiC X-ray photodiodes were investigated through experim...
High performance SiC detectors for ionising radiation have been designed, manufactured and tested. S...
Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of...
The quantum efficiencies of semiconductor photodiodes have been measured at photon energies from 5 t...
Ultraviolet radiation covers the wavelength from 400nm down to 10nm. The superior material propertie...
A variety of new types of detectors based on wide band gap materials have been developed for soft X-...
The results of electrical characterisation and X-ray detection measurements of two different active ...
AbstractThe results of electrical characterisation and X-ray detection measurements of two different...
AbstractFive SiC Schottky photodiodes for X-ray detection have been electrically characterized at ro...
Five SiC Schottky photodiodes for X-ray detection have been electrically characterized at room tempe...
4H-SiC Schottky photodiodes, with epitaxial layers, employing thin (20 nm) Ni2Si Schottky contacts,...
Mo/4H-SiC Schottky diodes were investigated as detectors for their suitability in photon counting X-...
Two commercial-off-the-shelf (COTS) 4H-SiC UV photodiodes have been investigated for their suitabili...
We describe a novel SiC Schottky diode architecture. The semi-transparent SiC Schottky diode has an ...
Novel photon counting Alo.8Gao.2As, GaAs and SiC X-ray photodiodes were investigated through experim...
Novel photon counting Al0.8Ga0.2As, GaAs and SiC X-ray photodiodes were investigated through experim...
High performance SiC detectors for ionising radiation have been designed, manufactured and tested. S...
Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of...
The quantum efficiencies of semiconductor photodiodes have been measured at photon energies from 5 t...
Ultraviolet radiation covers the wavelength from 400nm down to 10nm. The superior material propertie...
A variety of new types of detectors based on wide band gap materials have been developed for soft X-...