AbstractRecent data on laser-annealed, boron-implanted silicon are analysed, and the results compared with earlier experiments and simple theory. Each substitutional boron decreases the total volume by about 90% of the volume per silicon atom in the perfect crystal
International audienceThe redistribution of boron in highly implanted 〈1 0 0〉 silicon (10 keV; 5×101...
International audienceThe redistribution of boron in highly implanted 〈1 0 0〉 silicon (10 keV; 5×101...
International audienceThe redistribution of boron in highly implanted 〈1 0 0〉 silicon (10 keV; 5×101...
AbstractRecent data on laser-annealed, boron-implanted silicon are analysed, and the results compare...
Boron pile-up at the maximum melt depth for laser melt annealing of implanted silicon has been repor...
Si crystals were doped with 11B by ion implantation followed by ruby laser annealing. Displacement o...
Si crystals were doped with 11B by ion implantation followed by ruby laser annealing. Displacement o...
Si crystals were doped with 11B by ion implantation followed by ruby laser annealing. Displacement o...
Si crystals were doped with 11B by ion implantation followed by ruby laser annealing. Displacement o...
Si crystals were doped with 11B by ion implantation followed by ruby laser annealing. Displacement o...
Single crystals of silicon were implanted at RT with 1 MeV boron ions to a dose of 1 × 1015 ions/cm2...
The process of boron displacement from the nodes into interstitial positions by interstitial Si ato...
The process of boron displacement from the nodes into interstitial positions by interstitial Si ato...
We studied the strain induced in a silicon lattice by the presence of boron clusters formed by the i...
Abstract—Nonmelt laser annealing has been investigated for the formation of ultrashallow, heavily do...
International audienceThe redistribution of boron in highly implanted 〈1 0 0〉 silicon (10 keV; 5×101...
International audienceThe redistribution of boron in highly implanted 〈1 0 0〉 silicon (10 keV; 5×101...
International audienceThe redistribution of boron in highly implanted 〈1 0 0〉 silicon (10 keV; 5×101...
AbstractRecent data on laser-annealed, boron-implanted silicon are analysed, and the results compare...
Boron pile-up at the maximum melt depth for laser melt annealing of implanted silicon has been repor...
Si crystals were doped with 11B by ion implantation followed by ruby laser annealing. Displacement o...
Si crystals were doped with 11B by ion implantation followed by ruby laser annealing. Displacement o...
Si crystals were doped with 11B by ion implantation followed by ruby laser annealing. Displacement o...
Si crystals were doped with 11B by ion implantation followed by ruby laser annealing. Displacement o...
Si crystals were doped with 11B by ion implantation followed by ruby laser annealing. Displacement o...
Single crystals of silicon were implanted at RT with 1 MeV boron ions to a dose of 1 × 1015 ions/cm2...
The process of boron displacement from the nodes into interstitial positions by interstitial Si ato...
The process of boron displacement from the nodes into interstitial positions by interstitial Si ato...
We studied the strain induced in a silicon lattice by the presence of boron clusters formed by the i...
Abstract—Nonmelt laser annealing has been investigated for the formation of ultrashallow, heavily do...
International audienceThe redistribution of boron in highly implanted 〈1 0 0〉 silicon (10 keV; 5×101...
International audienceThe redistribution of boron in highly implanted 〈1 0 0〉 silicon (10 keV; 5×101...
International audienceThe redistribution of boron in highly implanted 〈1 0 0〉 silicon (10 keV; 5×101...
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